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Park, Sang-Hee Ko (박상희)
교수, Department of Materials Science & Engineering(신소재공학과)
Research Area
THIN FILM TRANSISTOR, SENSOR, MEMRISTOR DEVICE
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Highly-stable flexible pressure sensor using piezoelectric polymer film on metal oxide TFT

    Jin, Taiyu; Park, Sang-Hee Koresearcher; Fang, Da-Wei, RSC ADVANCES, v.12, no.33, pp.21014 - 21021, 2022-07

    2
    Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

    Yang, Junghoon; Park, HyunWoo; Kim, Baul; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9699 - 9706, 2022-07

    3
    An immunosensor based on a high performance dual-gate oxide semiconductor thin-film transistor for rapid detection of SARS-CoV-2

    Kim, Jingyu; Jeong, Sehun; Sarawut, Siracosit; et al, LAB ON A CHIP, v.22, no.5, pp.899 - 907, 2022-03

    4
    Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

    Cho, Seong-In; Ko, Jong Beom; Lee, Seung Hee; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.893, 2022-02

    5
    Improving the electrical performance of vertical thin-film transistor by engineering its back-channel interface

    Lee, Kwang-Heum; Lee, Seung Hee; Cho, Sang-Joon; et al, MICROELECTRONIC ENGINEERING, v.253, 2022-01

    6
    Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

    Kim, Junsung; Kim, Do Hyung; Cho, Seong-In; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1798 - 1801, 2021-12

    7
    Effect of H-2 addition during PECVD on the moisture barrier property and environmental stability of H:SiNx film

    Kim, Jingyu; Jeong, Wooseok; Lee, Seunghee; et al, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.104, no.12, pp.6670 - 6677, 2021-12

    8
    Ultrathin, Flexible, and Transparent Oxide Thin-Film Transistors by Delamination and Transfer Methods for Deformable Displays

    Ko, Jong Beom; Lee, Seung Hee; Lee, Tae-Ik; et al, ADVANCED MATERIALS TECHNOLOGIES, v.6, no.11, pp.2100431, 2021-11

    9
    Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics

    Cho, Seong-In; Jeon, Jae Bum; Kim, Joo Hyung; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.9, no.32, pp.10243 - 10253, 2021-08

    10
    Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

    Lee, Seunghee; Kim, Miso; Mun, Geumbi; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.33, pp.40134 - 40144, 2021-08

    11
    Self-Assembled Nano-Lotus Pod Metasurface for Light Trapping

    Lee, Nayeun; Kim, Reehyang; Kim, Ju Young; et al, ACS PHOTONICS, v.8, no.6, pp.1616 - 1622, 2021-06

    12
    Hetero-Dimensional 2D Ti3C2Tx MXene and 1D Graphene Nanoribbon Hybrids for Machine Learning-Assisted Pressure Sensors

    Lee, Ho Jin; Yang, Jun Chang; Choi, Jung Woo; et al, ACS NANO, v.15, no.6, pp.10347 - 10356, 2021-06

    13
    Suppressing channel-shortening effect of self-aligned coplanar Al-doped In-Sn-Zn-O TFTs using Mo-Al alloy source/drain electrode as Cu diffusion barrier

    Jeong, Wooseok; Winkler, Joerg; Schmidt, Hennrik; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.859, 2021-04

    14
    Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface

    Jeon, Guk-Jin; Yang, Junghoon; Lee, Seung Hee; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.363 - 366, 2021-03

    15
    Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08

    16
    Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Koresearcher; et al, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04

    17
    Solution-Processed, Photo-Patternable Fluorinated Sol-Gel Hybrid Materials as a Bio-Fluidic Barrier for Flexible Electronic Systems

    Lee, Injun; Kim, Yong Ho; Jang, Jinhyeong; et al, ADVANCED ELECTRONIC MATERIALS, v.6, no.3, pp.1901065, 2020-03

    18
    Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

    Ko, Jong Beom; Lee, Seung-Hee; Park, Kyung Woo; et al, RSC ADVANCES, v.9, no.62, pp.36293 - 36300, 2019-11

    19
    Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

    Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11

    20
    Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor

    Jeon, Guk-Jin; Lee, Seung-Hwan; Lee, Seung Hee; et al, SCIENTIFIC REPORTS, v.9, 2019-03

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