Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Abstract

A solution-process-based nonvolatile memory thin-film transistor (MTFT) was demonstrated to realize simple and low cost memory devices for future large-area electronics. The semiconducting active channel of zinc indium oxide (ZIO) and a gate insulator of poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] were prepared by a spin-coating method using corresponding precursor solutions. The obtained ZIO film was amorphous and showed an excellent transmittance (similar to 90%) in the visible range. The MTFT showed a turn-on voltage shift originating from the ferroelectric nature of P(VDF-TrFE), a field-effect mobility of 3.3 cm(2) V(-1) s(-1), and a subthreshold swing of 0.86 V/dec with an on/off current ratio of 8.4x10(6).