Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Cited 41 time in webofscience Cited 40 time in scopus
  • Hit : 588
  • Download : 0
Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 mu m) and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 mu A at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-03
Language
English
Article Type
Article
Keywords

TRANSPARENT

Citation

IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.360 - 362

ISSN
0741-3106
DOI
10.1109/LED.2013.2296604
URI
http://hdl.handle.net/10203/199032
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 41 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0