Browse "School of Electrical Engineering(전기및전자공학부)" by Subject TRANSISTORS
Showing results 1 to 60 of 84
| A charge pumping technique to identify biomolecular charge polarity using a nanogap embedded biotransistor Kim, Sung-Ho; Kim, Jee-Yeon; Ahn, Jae-Hyuk; Park, Tae-Jung; Lee, Sang-Yup; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.97, no.7, 2010-08 |
| A CMOS Wideband Highly Linear Low-Noise Amplifier for Digital TV Applications Bae, Jeong-Yeol; Kim, Suna; Cho, Hong-Soo; Lee, In-Young; Ha, Dong Sam; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.61, no.10, pp.3700 - 3711, 2013-10 |
| A Generalized Threshold Voltage Model of Tied and Untied Double-Gate Junctionless FETs for a Symmetric and Asymmetric Structure Hur, Jae; Choi, Ji-Min; Woo, Jong-Ho; Jang, Hyunjae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.9, pp.2710 - 2716, 2015-09 |
| A modulus-engineered multi-layer polymer film with mechanical robustness for the application to highly deformable substrate platform in stretchable electronics Kim, Youson; Kim, Junmo; kim, chanyoung; Kim, Taehyun; Lee, Chungryeol; Jeong, Kihoon; Jo, Woosung; et al, CHEMICAL ENGINEERING JOURNAL, v.431, no.2, 2022-03 |
| A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients Kim, Sung-Ho; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.1, pp.241 - 246, 2012-01 |
| A Nonpiecewise Model for Long-Channel Junctionless Cylindrical Nanowire FETs Duarte, Juan P; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.33, no.2, pp.155 - 157, 2012-02 |
| A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun, NANO CONVERGENCE, v.9, no.1, pp.1 - 18, 2022-10 |
| A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction Je, Minkyu; Han, Jeonghu; Shin, Hyung-Cheol; Lee, Kwy-Ro, MICROELECTRONICS RELIABILITY, v.43, no.4, pp.601 - 609, 2003-04 |
| A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06 |
| A WLAN RF CMOS PA With Large-Signal MGTR Method Joo, Tae-Hwan; Koo, Bon-Hoon; Hong, Song-Cheol, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.61, pp.1272 - 1279, 2013-03 |
| Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11 |
| APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TO ULSI MATERIAL PROCESSING AND DEVICE FABRICATION SNNIKRISHNAN, U; Yoon, Giwan; KWONG, DL, THIN SOLID FILMS, v.241, no.1-2, pp.329 - 334, 1994-04 |
| Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications Yoon, Giwan; Epstein, Y, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.5, pp.1679 - 1683, 1998-05 |
| Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode Hur, Jae; Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Bang, Tewook; Jeon, Seung-Bae; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544, 2016-05 |
| Comprehensive study of a detection mechanism and optimization strategies to improve sensitivity in a nanogap-embedded biotransistor Kim, Sung-Ho; Ahn, Jae-Hyuk; Park, Tae-Jung; Lee, Sang-Yup; Choi, Yang-Kyu, JOURNAL OF APPLIED PHYSICS, v.107, no.11, 2010-06 |
| Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09 |
| Concentration dependent electron distributions in heavily Si-doped GaAs Lee, NY; Kim, Jae Eun; Park, Hae Yong; Kwak, DH; Lee, Hee Chul; Lim, H, SOLID STATE COMMUNICATIONS, v.99, no.8, pp.571 - 575, 1996-08 |
Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Jeon, Chang-Hoon; Jeon, Gwang-Jae; Han, Jin-Woo; Kim, Choong-Ki; et al, SCIENTIFIC REPORTS, v.6, 2016-01 |
| Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption Sim, Dong Min; Kim, Mincheol; Yim, Soonmin; Choi, Min Jae; Choi, Jaesuk; Yoo, Seunghyup; Jung, Yeon Sik, ACS NANO, v.9, no.12, pp.12115 - 12123, 2015-12 |
| Design of ultrathin OLEDs having oxide -based transparent electrodes and encapsulation with sub -mm bending radius Kim, Eungjun; Kwon, Jeonghyun; Kim, Cheolgyu; Kim, Taek-Soo; Choi, Kyung Cheol; Yoo, Seunghyup, ORGANIC ELECTRONICS, v.82, 2020-07 |
| Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jin, NANO LETTERS, v.12, no.8, pp.3887 - 3892, 2012-08 |
| Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices Oh, Joong Gun; Shin, Yunsang; Shin, Woo Cheol; Sul, Onejae; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.99, no.19, 2011-11 |
| Effective Liquid-Phase Exfoliation and Sodium Ion Battery Application of MoS2 Nanosheets Bang, Gyeong Sook; Nam, Kwan Woo; Kim, Jong Yun; Shin, Jongwoo; Choi, Jang Wook; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.6, no.10, pp.7084 - 7089, 2014-05 |
| Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04 |
| Efficient organic photomemory with photography-ready programming speed Kim, Min-Cheol; Seong, Hyejeong; Lee, Seungwon; Kwon, Hyukyun; Im, Sung Gap; Moon, Hanul; Yoo, Seunghyup, SCIENTIFIC REPORTS, v.6, 2016-07 |
| Efficient thin-film organic solar cells based on pentacene/C-60 heterojunctions Yoo, Seunghyup; Domercq, B; Kippelen, B, APPLIED PHYSICS LETTERS, v.85, no.22, pp.5427 - 5429, 2004-11 |
| Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong Woon; Moon, Jung-Min; Seo, Yu Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155, 2014-03 |
| Enhanced Electrical Properties of Metal-Organic Chemical Vapor Deposition-Grown MoS2 Thin Films through Oxygen-Assisted Defect Control Hong, Woonggi; Park, Cheolmin; Shim, Gi Woong; Yang, Sang Yoon; Choi, Sung-Yool, ADVANCED ELECTRONIC MATERIALS, v.8, no.7, 2022-07 |
| Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications Joh, Hongrae; Nam, Sooji; Jung, Minhyun; Shin, Hunbeom; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp.51339 - 51349, 2023-10 |
| First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications Seo, Myungsoo; Kang, Min Ho; Jeon, Seung-Bae; Bae, Hagyoul; Hur, Jae; Jang, Byung Chul; Yun, Seokjung; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448, 2018-09 |
| Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition Jang, Byung Chul; Seong, Hyejeong; Kim, Sung Kyu; Kim, Jong Yun; Koo, Beom Jun; Choi, Junhwan; Yang, Sang Yoon; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.20, pp.12951 - 12958, 2016-05 |
| Graphene-based photonic devices for soft hybrid optoelectronic systems Kim, Jin Tae; Kim, Jaehyeon; Choi, Hongkyw; Choi, Choon-Gi; Choi, Sung-Yool, NANOTECHNOLOGY, v.23, no.34, 2012-08 |
| H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09 |
| Hetero-structure mode space method for efficient device simulations Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.130, no.10, pp.104303 - 104303, 2021-09 |
| Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs Jeong, Jaeyong; Geum, Dae-Myeong; Kim, SangHyeon, ELECTRONICS, v.11, no.19, 2022-10 |
| High Aspect Ratio Silicon Nanowire for Stiction Immune Gate-All-Around MOSFETs Han, Jin-Woo; Moon, Dong-Il; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.8, pp.864 - 866, 2009-08 |
| High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR-type Flash Memory Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.265 - 268, 2009-03 |
| High Pressure Microwave Annealing Effect on Electrical Properties of Hf (x) Zr1-x O Films near Morphotropic Phase Boundary Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; Kim, Giuk; Shin, Hunbeom; Gaddam, Venkateswarlu; Jeon, Sanghun, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.9, pp.4826 - 4835, 2023-08 |
| High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.3, pp.228 - 230, 2010-03 |
| Highly durable and flexible memory based on resistance switching Kim, Sung-Ho; Yarimaga, Oktay; Choi, Sung-Jin; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.54, no.4, pp.392 - 396, 2010-04 |
| Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung-Jin, ACS NANO, v.10, no.7, pp.7142 - 7146, 2016-07 |
| Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode Park, Junghak; Das, Dipjyoti; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANO CONVERGENCE, v.6, no.1, 2019-12 |
| Improvement of Gate Dielectric Integrity Using O-2 Plasma Treatment Prior to Atomic Layer Deposition on Chemical Vapor Deposition Grown Graphene Sul, Onejae; Bong, Jaehoon; Yoon, Alex; Cho, Byung-Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.1, pp.220 - 223, 2015-01 |
| Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs Moon, Joon-Bae; Moon, Dong-Il; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.61, no.3, pp.1420 - 1425, 2014-06 |
| Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.84 - 86, 2011-01 |
| Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05 |
| Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11 |
| Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; Hong, Woonggi; Shim, Gi Woong; Yang, Sang Yoon; Im, Sung Gap; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05 |
| Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability Lee, Geon-Beom; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, MICROELECTRONICS AND RELIABILITY, v.127, pp.114383, 2021-12 |
| LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule Heater Jeon, Chang-Hoon; Kim, Choong-Ki; Park, Jun-Young; Jeong,Ui-Sik; Lee, Byung-Hyun; Kim, Kyung Rok; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp.5081 - 5086, 2017-12 |
| Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01 |
| Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate Lee, JS; Ha, DW; Choi, Yang-Kyu; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33, 2003-01 |
| Low-Temperature Annealing for Highly Conductive Lead Chalcogenide Quantum Dot Solids Baik, Seung Jae; Kim, Kyungnam; Lim, Koeng Su; Jung, SoMyung; Park, Yun-Chang; Han, Dong Geon; Lim, Sooyeon; et al, JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.3, pp.607 - 612, 2011-01 |
| Low-voltage nonvolatile multi-bit memory fabricated by the patterning and transferring of ferroelectric polymer film Kim, Woo Young; Lee, Hee-Chul, ORGANIC ELECTRONICS, v.19, pp.1 - 6, 2015-04 |
| Materials and Fabrication Processes for Transient and Bioresorbable High-Performance Electronics Hwang, SW; Kim, DH; Tao, H; Kim, TI; Kim, S; Yu, KJ; Panilaitis, B; et al, ADVANCED FUNCTIONAL MATERIALS, v.23, no.33, pp.4087 - 4093, 2013-09 |
| Mechanical and Electrical Reliability Analysis of Flexible Si Complementary Metal-Oxide-Semiconductor Integrated Circuit Kim, Seungyoon; Kim, Cheolgyu; Bong, Jae Hoon; Hwang, Wan Sik; Kim, Taek-Soo; Oh, Jae Sub; Cho, Byung Jin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6473 - 6480, 2019-10 |
| Mechanically transformative electronics, sensors, and implantable devices Byun, Sang-Hyuk; Sim, Joo Yong; Zhou, Zhanan; Lee, Juhyun; Qazi, Raza; Walicki, Marie C.; Parker, Kyle E.; et al, SCIENCE ADVANCES, v.5, no.11, pp.eaay0418, 2019-11 |
| Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure Yoon, Giwan; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04 |
| Monolithic integration of InP-Based HEMT and MSM photodiode using InGaAsP (lambda=1.3 mu m) buffer Cha, JH; Kim, JH; Kim, CY; Shin, SH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2549 - 2552, 2005 |
| Multiterminal Transport Measurements of Multilayer InSe Encapsulated by hBN Choi, YiTaek; Seok, Yongwook; Jang, Hanbyeol; Kumar, Arvind Shankar; Watanabe, Kenji; Taniguchi, Takashi; Gao, Xuan P. A.; et al, ACS APPLIED ELECTRONIC MATERIALS, v.3, no.1, pp.163 - 169, 2021-01 |
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