Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs
The influence of the total ionizing dose (TID) on sub-100 nm gate-all-around (GAA) MOSFETs is investigated through experiments and numerical simulations. Particularly, the TID effect is explored for various gate lengths and radiation doses. The radiation-induced charges and traps under the gate spacer result in changes of the device characteristics and is a dominant factor to cause the device degradation. This phenomenon is experimentally examined by the junction modification of GAA MOSFETs and supported by three-dimensional numerical simulations.
- Issue Date
- 2014-06
- Language
- English
- Article Type
- Article
- Keywords
RADIATION RESPONSE; MOS CAPACITORS; FIN-WIDTH; OXIDES; TRANSISTORS; IRRADIATION; DEPENDENCE; DEVICES; BIAS
- Citation
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.61, no.3, pp.1420 - 1425
- ISSN
- 0018-9499
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
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