Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device

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An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-01
Language
English
Article Type
Article
Keywords

DEPLETED SOI MOSFETS; SILICON NANOWIRES; TRANSISTORS; TRANSPORT

Citation

IEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.84 - 86

ISSN
0741-3106
URI
http://hdl.handle.net/10203/96012
Appears in Collection
EE-Journal Papers(저널논문)
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