DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T09:42:47Z | - |
dc.date.available | 2013-03-09T09:42:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.84 - 86 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96012 | - |
dc.description.abstract | An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DEPLETED SOI MOSFETS | - |
dc.subject | SILICON NANOWIRES | - |
dc.subject | TRANSISTORS | - |
dc.subject | TRANSPORT | - |
dc.title | Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device | - |
dc.type | Article | - |
dc.identifier.wosid | 000285844400028 | - |
dc.identifier.scopusid | 2-s2.0-78650889801 | - |
dc.type.rims | ART | - |
dc.citation.volume | 32 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 84 | - |
dc.citation.endingpage | 86 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Charge pumping | - |
dc.subject.keywordAuthor | floating-body (FB) | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | silicon-on-insulator MOS field-effect transistor (FET) | - |
dc.subject.keywordPlus | DEPLETED SOI MOSFETS | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
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