Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device

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dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-09T09:42:47Z-
dc.date.available2013-03-09T09:42:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-01-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.84 - 86-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/96012-
dc.description.abstractAn optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectDEPLETED SOI MOSFETS-
dc.subjectSILICON NANOWIRES-
dc.subjectTRANSISTORS-
dc.subjectTRANSPORT-
dc.titleInterface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device-
dc.typeArticle-
dc.identifier.wosid000285844400028-
dc.identifier.scopusid2-s2.0-78650889801-
dc.type.rimsART-
dc.citation.volume32-
dc.citation.issue1-
dc.citation.beginningpage84-
dc.citation.endingpage86-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCharge pumping-
dc.subject.keywordAuthorfloating-body (FB)-
dc.subject.keywordAuthorinterface trap-
dc.subject.keywordAuthorsilicon-on-insulator MOS field-effect transistor (FET)-
dc.subject.keywordPlusDEPLETED SOI MOSFETS-
dc.subject.keywordPlusSILICON NANOWIRES-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusTRANSPORT-
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