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Showing results 1 to 18 of 18

1
Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08

2
Atomic and electronic structure of amorphous HfSiO4

Chang, Kee-Joo; Noh, H.-K.; Ryu, B., The 11th Asian Workshop on First-principles Electronic Structure Calculations, 2008-11

3
Boron segregation and effect of point defects in Si/SiO2 interface

Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011

4
Diffusion and segregation of B dopants at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11

5
Electronic structure and defects in high-k dielectrics and oxide semiconductors

Ryu, B.; Noh, H.-K.; Bang, J.; Choi, E.-A.; Lee, W.-J.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08

6
Electronic Structure and Defects in Oxide Semiconductors and Insulators

Ryu, B.; Choi, E.-A.; Noh, H.-K.; Bang, J.; Lee, W.-J.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010

7
Electronic structure of oxygen vacancy in amorphous HfSiO4

Chang, Kee-Joo; Noh, H.-K.; Ryu, B., 한국물리학회 가을학술논문발표회, 한국물리학회, 2008-10

8
First-principles study on boron segregation at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10

9
O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability

Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 한국반도체학술대회, 한국반도체학회, 2011-02

10
Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors

Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society , 2011-04

11
Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors

Chang, Kee-Joo; Ryu, B.; Noh, H.-K.; Choi, E.-A., 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, ACCMS, 2011-03

12
Segregation of B dopants in Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06

13
Stability and segregation of boron dopants at the Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04

14
Stability of boron dopants at the Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02

15
Stability of boron dopants near the interface between Si and amorphous SiO2

Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation v. no. , ACCMS , 2011-03

16
The atomic and electronic structure of O-vacancy in amorphous In-Ga-Zn-O semiconductors

Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11

17
The electronic structure of oxygen vacancy in amorphous HfSiO_4

Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07

18
The role of O-vacancy in Negative Bias Illumination Stress Instability in amoprhous In-Ga-Zn-O TFTs

Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2010-10

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