Browse by Author Oh, Young Jun
Showing results 1 to 38 of 38
| A hybrid functional study of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors Han, Woo Hyun; Oh, Young Jun; Chang, Kee Joo, 2015 APS March Meeting, APS, 2015-03 |
| Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals Lee, In-Ho; Oh, Young Jun; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo, COMPUTER PHYSICS COMMUNICATIONS, v.203, pp.110 - 121, 2016-06 |
| Ab initio materials design using conformational space annealing and its applications to optical materials Lee, In Ho; Oh, Young Jun; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo, NANO KOREA 2016 Symposium, 나노코리아 조직위원회, 2016-07 |
| Computational design of direct band gap carbon superlattices with efficient optical transition Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11 |
| Computational design of direct band gap Si superlattice Kim, Sung Hyun; Oh, Young Jun; Lee, In Ho; Lee, Joo Young; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11 |
| Computational Design of Silicon Allotropes with Direct Band Gaps Kim, Sung Hyun; Oh, Young Jun; Lee, In Ho; Lee, Joo Young; Chang, Kee Joo, The 3rd International Conference on Advanced Electromaterials, ICAE, 2015-11 |
| Computational discovery of direct band gap silicon superlattices with efficient optical transition Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, 33rd International Conference on the Physics of Semiconductors, Peking University, 2016-08 |
| Computational search for dipole‐allowed direct band gap silicon allotropes based on global optimization Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, The 18th International Symposium on the Physics of Semiconductors and Applications, 한국물리학회, 2016-07 |
| Computational search for direct band gap carbon allotropes with efficient optical transition Oh, Young Jun; Kim, Sunghyun; Lee, In Ho; Lee, Joo Young; Chang, Kee Joo, 2016 봄학술논문발표회 및 제92회 정기총회, 한국물리학회, 2016-04 |
| Computational search for direct band gap silicon crystals Lee, In-Ho; Lee, Jooyoung; Oh, Young Jun; Kim, Sunghyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.90, no.11, pp.115209 - 115209, 2014-09 |
| Conformational space annealing scheme in the inverse design of functional materials Kim, Sung Hyun; Lee, In Ho; Lee, Joo Young; Oh, Young Jun; Chang, Kee Joo, 2015 APS March Meeting, APS, 2015-03 |
Dipole-allowed direct band gap silicon superlattices Oh, Young Jun; Lee, In-Ho; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo, SCIENTIFIC REPORTS, v.5, pp.18086 - 18086, 2015-12 |
| Direct band gap carbon superlattices with efficient optical transition Oh, Young Jun; Kim, Sunghyun; Lee, In-Ho; Lee, Jooyoung; Chang, Kee Joo, PHYSICAL REVIEW B , v.93, no.8, pp.085201 - 085201, 2016-02 |
| Direct band gap silicon crystals predicted by an inverse design method Oh, Young Jun; Lee, In Ho; Lee, Joo Young; Kim, Sung Hyun; Chang, Kee Joo, 2015 APS March Meeting, APS, 2015-03 |
| Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface Kim, Geun-Myeong; Oh, Young Jun; Chang, Kee-Joo, JOURNAL OF APPLIED PHYSICS, v.114, no.22, pp.223705 - 223705, 2013-12 |
| Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors Noh, Hyeon-Kyun; Oh, Young Jun; Chang, Kee-Joo, The 2nd International Conference on Advanced Electromaterials, ICAE, 2013-11 |
| Electric-field-induced drift motion of charged oxygen vacancy in amorphous In-Ga-Zn-O semiconductors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, The 16th International Symposium on the Physics of Semiconductors and Applications, ISPSA, 2013-07 |
| Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductor Han, Woo Hyun; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07 |
| Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior Han, W. H.; Oh, Young Jun; Chang, Kee-Joo; Park, Ji-Sang, PHYSICAL REVIEW APPLIED, v.3, no.4, pp.044008, 2015-04 |
| Ge chemical bonding effect on B diffusion in SiGe/SiO2 interface Lee, Chang Hwi; Oh, Young Jun; Kim, Geun-Myeong; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 |
| Many-body quasiparticle and Hybrid Functional Calculations of the Schottky barrier Height at TiN/HfO2 interface Oh, Young Jun; Lee, Alex Tekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 |
| Mechanisms for boron diffusion and segregation at the Si/SiO2 interface Oh, Young Jun; Kim, Geun-Myung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 31st International Conference on the Physics of Semiconductors, ICPS, 2012-07 |
| Migration pathway and barrier for B diffusion at the planar interface between Si and SiO2 Kim, Geun-Myung; Oh, Young Jun; Chang, Kee-Joo, The 15th Asian Workshop on First-Principles Electronic Structure Calculations, National Taiwan University, 2012-11 |
| Migration Pathways and Barriers for B Diffusion at Defected Si/⍺-quartz SiO2 Interface Kim, Geun-Myeong; Oh, Young Jun; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 |
| Prediction of direct band gap silicon superlattices with dipole-allowed optical transition Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, APS March Meeting 2016, American Physics Society, 2016-03 |
| Schottky barrier height at TiN/HfO2 interface and B segregation mechanism at Si/SiO2 interface = TiN/HfO2 계면의 쇼트키 장벽과 Si/SiO2 계면의 붕소 확산 메카니즘 연구link Oh, Young Jun; 오영준; et al, 한국과학기술원, 2015 |
| Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface Lee, Chang Hwi; Kim, Geun Myeong; Oh, Young Jun; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.14, no.11, pp.1557 - 1563, 2014-11 |
| The effect of Al atoms on the effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11 |
| The effect of Al content on the work function engineering at TiAlN/HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 APS March Meeting, APS, 2015-03 |
| The effect of Al doping on effective work function in metal/HfO2 interfaces Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 33rd International Conference on the Physics of Semiconductors, Peking University, 2016-08 |
| The effect of Al impurities on the effective work function at metal/HfO2 interfaces Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07 |
| The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.27, pp.275104 - 275104, 2016-07 |
| The effect of Si impurities on the effective work function at TiN/t-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 제12회 고등과학원 전자구조 계산학회, KIAS, 2016-06 |
| The effect of Si impurities on the effective work function at TiN/tetragonal-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, APS March Meeting 2016, American Physics Society, 2016-03 |
| The effect of Si impurities on the Schottky barrier height at TiN/tetragonal-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11 |
| The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.16, no.3, pp.034902 - 034902, 2015-06 |
| The electronic structure of oxygen-related defects in non-stoichiometric amorphous In-Ga-Zn-O Han, Woo Hyun; Oh, Young Jun; Chang, Kee Joo, The 3rd International Conference on Advanced Electromaterials, ICAE, 2015-11 |
| Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from alpha-B to gamma-B Han, Woo Hyun; Oh, Young Jun; Choe, Duk-Hyun; Kim, Sunghyun; Lee, In-Ho; Chang, Kee Joo, NPG ASIA MATERIALS, v.9, pp.e400 - e400, 2017-07 |
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