Dipole-allowed direct band gap silicon superlattices

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Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2015-12
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING DIODE; GLOBAL OPTIMIZATION; ENERGY CALCULATIONS; SOLAR-CELLS; SEMICONDUCTORS; APPROXIMATION; EFFICIENCY; SURFACES; DESIGN; STATE

Citation

SCIENTIFIC REPORTS, v.5, pp.18086 - 18086

ISSN
2045-2322
DOI
10.1038/srep18086
URI
http://hdl.handle.net/10203/207004
Appears in Collection
PH-Journal Papers(저널논문)
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