Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors
- Publisher
- ICAE
- Issue Date
- 2013-11
- Language
- English
- Citation
The 2nd International Conference on Advanced Electromaterials
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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