Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Noh, Hyeon-Kyun | ko |
| dc.contributor.author | Oh, Young Jun | ko |
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.date.accessioned | 2019-04-15T17:30:18Z | - |
| dc.date.available | 2019-04-15T17:30:18Z | - |
| dc.date.created | 2014-01-12 | - |
| dc.date.issued | 2013-11 | - |
| dc.identifier.citation | The 2nd International Conference on Advanced Electromaterials | - |
| dc.identifier.uri | http://hdl.handle.net/10203/256580 | - |
| dc.language | English | - |
| dc.publisher | ICAE | - |
| dc.title | Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 2nd International Conference on Advanced Electromaterials | - |
| dc.identifier.conferencecountry | KO | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Noh, Hyeon-Kyun | - |
| dc.contributor.nonIdAuthor | Oh, Young Jun | - |
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