Browse by Title 

Showing results 56721 to 56740 of 278764

56721
Defect and hole concentrations in N-doped ZnO grown by using a N$_2$O gas

Lee, EC; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.499 - 499, 한국물리학회, 2001

56722
DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY

Lee, Hyeon-Keun; Kim, Do Kyung, MODERN PHYSICS LETTERS B, v.23, no.31-32, pp.3869 - 3876, 2009-12

56723
Defect characterization using scanning-laser-generated guided waves

Flynn, EB; Chong, SY; Jarmer, GJ; Lee, Jung Ryul, Advances in Structural Health Management and Composite Structures 2012, 전북대학교, 2012-08

56724
Defect Chemistry of Highly Defective La0.1Sr0.9Co0.8Fe0.2O3-delta by Considering Oxygen Interstitials

Im, Ha-Ni; Singh, Bhupendra; Hong, Jae-Woon; Kim, In-Ho; Lee, Kang Taek; Song, Sun-Ju, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.163, no.14, pp.F1588 - F1595, 2016-11

56725
Defect Controlled Synthesis of Emissive 2D Materials through Intercalation

Jeon, Seokwoo, 2016 MRS Spring Meeting & Exhibit, MRS, 2016-03-31

56726
Defect creation in a-Si:H thin film transistors by bias-stress

Wi, BR; Lee, WH; Lee, C; Shin, Sung-Chul, JAPANESE JOURNAL OF APPLIED PHYSICS, v.36, no.5A, pp.536 - 539, 1997-05

56727
DEFECT DENSITY EVOLUTION AND STEADY RHEOLOGICAL BEHAVIORS OF LIQUID-CRYSTALLINE POLYMERS

KIM, KM; CHO, H; Chung, In Jae, JOURNAL OF RHEOLOGY, v.38, no.5, pp.1271 - 1283, 1994

56728
Defect detection of semiconductor wafers using neural networks = 신경망을 이용한 반도체 웨이퍼의 결함 검출link

Kim, Seungryul; Lee, Chang-Ock; et al, 한국과학기술원, 2021

56729
Defect detection on semiconductor wafers using image processing techniques = 이미지 기술을 이용한 반도체 웨이퍼의 결함 검사link

Jeong, Seong Jin; Lee, Chang-Ock; et al, 한국과학기술원, 2020

56730
DEFECT ENERATION BY HOLE INJECTION IN HYDROGENATED AMORPHOUS SILICON

Kim, Cheolse; Lee, Choochon; Shin, Sung-Chul, Solid State Communications, Vol.100, No.6, pp.377-380, 1996-07

56731
Defect energetics in SrTiO3 symmetric tilt grain boundaries

Lee, HS; Mizoguchi, T; Mistui, J; Yamamoto, T; Kang, Suk-Joong L; Ikuhara, Y, PHYSICAL REVIEW B, v.83, no.10, 2011-03

56732
Defect engineering at surfaces and interfaces for efficient energy conversion technologies

Tsvetkov, Nikolai; Kang, Jeung Ku, The 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017), Global Frontier R&D Center for Hybrid Interface Materials, NCRC for Hybrid Materials Solution, 2017-11-08

56733
Defect Engineering in Graphene: From Biomimetic Catalysis to Nanoscale Friction

Kim, Yong-Hyun, 15th Asian Workshop on First-Principles Electronic Structure Calculations, Institute of Atomic and Molecular Sciences, 2012-11-05

56734
Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

Jung, Jung Hwan; Kotal, Moumita; 장민호; Lee, Junseok; Cho, Yong-Hoon; Kim, Won-Jong; Oh, Il-Kwon, RSC ADVANCES, v.6, no.77, pp.73939 - 73946, 2016-07

56735
Defect Enhanced Boron Diffusion is SiO2

Jin, YG; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.512 - 512, 한국물리학회, 2000

56736
DEFECT EQUILIBRATION AND INTRINSIC STRESS IN UNDOPED HYDROGENATED AMORPHOUS-SILICON

KITSUNO, Y; Cho, Gyuseong; DREWERY, J; HONG, WS; PEREZMENDEZ, V, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.33, no.3A, pp.1261 - 1267, 1994-03

56737
Defect Formation and Annealing Behavior in MeV Si Self-Implanted Silicon

조남훈; 장기완; 서경수; 이정용; 노재상, 한국재료학회지, v.6, no.7, pp.733 - 741, 1996-12

56738
DEFECT FORMATION IN THE SOLID-PHASE EPITAXIAL-GROWTH OF GAAS FILMS ON SI (001) SUBSTRATE

CHO, KI; Choo, Woong Kil; Lee, JeongYong; Park, Sin Chong; NISHINAGA, T, JOURNAL OF APPLIED PHYSICS, v.69, no.1, pp.237 - 242, 1991-01

56739
Defect formation mechanisms in the interfacial layer due to thermal treatment between the ZnO thin film and the Si substrate

Yuk, Jong Min; Lee, Jeong Yong, Asian-Pacific Conference on Surface Science, Asian-Pacific Conference, 2006-12-19

56740
Defect generation by hole injection in hydrogenated amorphous silicon

Kim, C; Lee, C; Shin, Sung-Chul, SOLID STATE COMMUNICATIONS, v.100, no.6, pp.377 - 380, 1996-11

rss_1.0 rss_2.0 atom_1.0