Metastable defects generated by hole injection under the constant current
condition are studied above room temperature. Defect saturation behavior
is observed after sufficient period of current soaking, which is faster at
higher temperatures. The saturated defect density is obtained from the
space charge limited current. We propose a simple model for the defect
kinetics in which hole induced defect creation and annihilation as well as
thermal annealing processes are considered. This model includes dispersive
hydrogen diffusion and fits well with the present experimental data.