DEFECT ENERATION BY HOLE INJECTION IN HYDROGENATED AMORPHOUS SILICON

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Metastable defects generated by hole injection under the constant current condition are studied above room temperature. Defect saturation behavior is observed after sufficient period of current soaking, which is faster at higher temperatures. The saturated defect density is obtained from the space charge limited current. We propose a simple model for the defect kinetics in which hole induced defect creation and annihilation as well as thermal annealing processes are considered. This model includes dispersive hydrogen diffusion and fits well with the present experimental data.
Publisher
Elsevier
Issue Date
1996-07
Keywords

semiconductors; thin films; electronic states (localized)

Citation

Solid State Communications, Vol.100, No.6, pp.377-380

ISSN
0038-1098
URI
http://hdl.handle.net/10203/20517
Appears in Collection
PH-Journal Papers(저널논문)

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