Defect creation in a-Si:H thin film transistors by bias-stress

Abstract

We have studied defect creation in hydrogenated amorphous silicon thin film transistors by measuring the I-V characteristic curves with the bias condition varied. It is found that there is a distortion in the I-V curves after a spatially asymmetric bias-stress. In order to explain the unusual behavior in the I-V characteristic curves, we employed increased defects at the lower part of the gap which have an asymmetric distribution along the channel due to the spatially asymmetric positive gate bias. Compared with the experiments, good agreement is obtained.