1 | Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, OH; Park, Y; Park, SH, JOURNAL OF APPLIED PHYSICS, v.102, pp.1637 - 1639, 2007-07 |
2 | High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method Cho, Yong-Hoon; Sun, YP; Kim, HM; Kang, TW; Suh, EK; Lee, HJ; Choi, RJ; Hahn, YB, APPLIED PHYSICS LETTERS, v.90, pp.311 - 314, 2007-01 |
3 | Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect Son, J. K.; Sakong, T.; Lee, S. N.; Paek, H. S.; Ryu, H.; Ha, K. H.; Nam, O.; Park, Y.; Hwang, J. S.; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.90, no.5, 2007-01 |
4 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07 |
5 | Effect of surface plasmon polariton mode on spontaneous emission in gold coated GaN/InGaN quantum-well structures Park, CH; Choi, JW; Cho, Yong-Hoon; Kim, SI; Son, JK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.905 - 909, 2007-03 |
6 | Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Sakong, T; Paek, HS; Nam, OH; Park, Y, APPLIED PHYSICS LETTERS, v.90, pp.178 - 182, 2007-03 |
7 | Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: vertical realignment of weakly coupled quantum dots Kwack, Ho-Sang; Kim, Byoung-O; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il, NANOTECHNOLOGY, v.18, no.31, 2007-08 |
8 | Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering Kwon, BJ; Kwack, HS; Lee, SK; Cho, Yong-Hoon; Park, SJ, APPLIED PHYSICS LETTERS, v.91, pp.851 - 858, 2007-08 |