Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

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Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-07
Language
English
Article Type
Article
Keywords

STRAINED-LAYER SUPERLATTICES; SEMICONDUCTORS; DYNAMICS; ENERGY; SHIFT

Citation

JOURNAL OF APPLIED PHYSICS, v.102, pp.1637 - 1639

ISSN
0021-8979
DOI
10.1063/1.2749281
URI
http://hdl.handle.net/10203/91527
Appears in Collection
PH-Journal Papers(저널논문)
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