High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method

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Optical characteristics of high-efficiency violet-blue, blue, and green light emissions in InxGa1-xN quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and 459 nm above the main peaks at 430, 463, and 509 nm with an effective carrier transfer from the higher to main peak sides is characteristic of these structures with various In contents of x < 0.2, 0.2 < x < 0.3, and x > 0.3, respectively. Robust carrier localization by uniform, small-size, and high-density phase segregation plays an important role in maintaining high efficiencies over a wide range of In contents in graded-In-content InGaN QW structures.
Publisher
AMER INST PHYSICS
Issue Date
2007-01
Language
English
Article Type
Article
Keywords

CARRIER DYNAMICS; INN

Citation

APPLIED PHYSICS LETTERS, v.90, pp.311 - 314

ISSN
0003-6951
DOI
10.1063/1.2430401
URI
http://hdl.handle.net/10203/91594
Appears in Collection
PH-Journal Papers(저널논문)
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