MS-Journal Papers(저널논문)

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 2441 to 2460 of 7246

2441
Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots

Shin, Byungha; Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, APPLIED PHYSICS LETTERS, v.81, no.8, pp.1423 - 1425, 2002-08

2442
Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

Chen, W; Shin, B; Goldman, RS; Stiff, A; Bhattacharya, PK, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.21, no.4, pp.1920 - 1923, 2003

2443
Mechanisms of semiconductor nanostructure formation

Goldman, RS; Shin, B; Lita, B, PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.195, no.1, pp.151 - 158, 2003-01

2444
Electron beam induced degradation of CaS : Pb thin film phosphor grown by atomic layer deposition

Yun, SJ; Park, SHK; Park, JB, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.2, pp.30 - 32, 2003-02

2445
Low-voltage dc thin-film electroluminescence with an indium-tin-oxide/CaS : Pb/ZnS/Al structure

Kim, YS; Park, SHK; Yun, SJ, JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.5, pp.L520 - L522, 2003-05

2446
Addition of the iminium salt [Me2N=CMe2][BF4] to the reductively activated benzene in [Cr(eta(4)-C6H6)(CO)(3)](2-)

Bao, J; Park, SHK; Geib, SJ; Cooper, NJ, ORGANOMETALLICS, v.22, no.16, pp.3309 - 3312, 2003-08

2447
Initiation and evolution of phase separation in GaP/InP short-period superlattices

Shin, Byungha; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.1, pp.216 - 219, 2004-01

2448
Controlling preferred orientation of ZnO thin films by atomic layer deposition

Park, SHK; Lee, YE, JOURNAL OF MATERIALS SCIENCE, v.39, no.6, pp.2195 - 2197, 2004-03

2449
Ultrathin film encapsulation of an OLED by ALD

Park, SHK; Oh, J; Hwang, CS; Lee, JI; Yang, YS; Chu, HY, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.21 - 23, 2005

2450
1.1 mW single-mode output power of all-monolithic 1.3 mu m InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition

Park, MR; Kwon, OK; Yoo, BS; Lee, KH; Song, HW; Han, WS; Ko Park, Sang-Hee; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.1-7, pp.101 - 103, 2005

2451
Characteristics of organic light emitting diodes with Al-doped ZnO anode deposited by atomic layer deposition

Park, SHK; Lee, JI; Hwang, CS; Chu, HY, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.1-7, pp.242 - 245, 2005

2452
Comparison between ZnO films grown by atomic layer deposition using H2O or O-3 as oxidant

Kim, SK; Hwang, CS; Park, SHK; Yun, SJ, THIN SOLID FILMS, v.478, no.1-2, pp.103 - 108, 2005-05

2453
Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

Shin, B; Leonard, JP; McCamy, JW; Aziz, MJ, APPLIED PHYSICS LETTERS, v.87, no.18, 2005-10

2454
Ultra thin film encapsulation of organic light emitting diode on a plastic substrate

Park, SHK; Oh, J; Hwang, CS; Lee, JI; Yang, YS; Chu, HY; Kang, KY, ETRI JOURNAL, v.27, no.5, pp.545 - 550, 2005-10

2455
Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode

Chung, CH; Ko, YW; Kim, YH; Sohn, CY; Chu, HY; Park, SHK; Lee, JH, THIN SOLID FILMS, v.491, no.1-2, pp.294 - 297, 2005-11

2456
Characteristics of ZnO thin films by means of plasma-enhanced atomic layer deposition

Park, Sang-Hee Ko; Hwang, Chi-Sun; Kwack, Ho-Sang; Lee, Jin-Hong; Chu, Hye Yong, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.10, pp.299 - 301, 2006

2457
Lifetime and electric characteristics of encapsulated organic light-emitting devices

Yang, Yong Suk; Chu, Hye Yong; Lee, Jeong-Ik; Park, Sang-Hee Ko; Hwang, Chi Sun; Chung, Sung Mook; Do, Lee-Mi; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.10, pp.7766 - 7770, 2006-10

2458
White light emitting electrophosphorescent devices with solution processed emission layer

Lee, Jeong-Ik; Chu, Hye Yong; Yang, Yong Suk; Do, Lee-Mi; Chung, Sung Mook; Park, Sang-Hee Ko; Hwang, Chi-Sun, JAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.12, pp.9231 - 9233, 2006-12

2459
On the phase shift of reflection high energy electron diffraction intensity oscillations during Ge(001) homoepitaxy by molecular beam epitaxy

Shin, Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J., JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.2, pp.221 - 224, 2007

2460
Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films

Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007

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