Electron beam induced degradation of CaS : Pb thin film phosphor grown by atomic layer deposition

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The effects of electron (e)-beam irradiation on the luminescent and the materials properties of CaS: Pb films were investigated using structural and compositional analysis techniques. Continuous e-beam irradiation on CaS: Pb thin film for 180 min resulted in an approximately 60% decrease of cathodoluminescence (CL) intensity. Transmission electron microscopic analysis indicated that e-beam irradiation induced the precipitation of Pb. The decrease of CL intensity by e-beam irradiation was mostly caused by the decrease of Pb2+ luminescent center ion concentration due to the precipitation of Pb. E-beam irradiation also resulted in heavy carbonaceous contamination on the surface. The thickness of the carbonaceous layer was approximately 10 nm. (C) 2002 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2003-02
Language
English
Article Type
Article
Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.2, pp.30 - 32

ISSN
1099-0062
DOI
10.1149/1.1536520
URI
http://hdl.handle.net/10203/201850
Appears in Collection
MS-Journal Papers(저널논문)
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