Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

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We have investigated the mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices. Using cross-sectional scanning tunneling microscopy, we determined the lateral spacing between dot columns in a series of five-period dot superlattices annealed for various times. As the annealing time is increased, the average column spacing increases, while the distribution of column spacings is broadened. A comparison with earlier studies of one-, five-, ten-, and twenty-period dot superlattices suggests that the lateral column spacing is determined by strain-enhanced bulk diffusion. We propose a conceptual model for self-ordering of quantum dot superlattices based upon a combination of island nucleation plus strain-enhanced island dissolution. (C) 2003 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
Issue Date
2003
Language
English
Article Type
Article; Proceedings Paper
Keywords

ORGANIZATION; INTERDIFFUSION; ISLANDS

Citation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.21, no.4, pp.1920 - 1923

ISSN
1071-1023
DOI
10.1116/1.1588645
URI
http://hdl.handle.net/10203/201852
Appears in Collection
MS-Journal Papers(저널논문)
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