Mechanisms of semiconductor nanostructure formation

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We have examined the formation mechanisms of a variety of semiconductor nanostructures, including phase separation-induced alloy nanostructures and strain-induced self-assembled quantum dots. Using data from cross-sectional scanning tunneling microscopy, in conjunction with X-ray reciprocal space maps, we have developed new models for self-ordering of InAs/GaAs quantum dot superlattices and spontaneous lateral phase separation in InAlAs alloys. These models are likely to be applicable to a wide range of heteroepitaxial semiconductor nanostructures.
Publisher
John Wiley & Sons Ltd.
Issue Date
2003-01
Language
English
Article Type
Article; Proceedings Paper
Keywords

QUANTUM-DOT SUPERLATTICES; INGAAS ALLOYS; ORGANIZATION; SEGREGATION; GROWTH

Citation

PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.195, no.1, pp.151 - 158

ISSN
0031-8965
DOI
10.1002/pssa.200306280
URI
http://hdl.handle.net/10203/201851
Appears in Collection
MS-Journal Papers(저널논문)
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