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Browse "MS-Journal Papers(저널논문)" by Author Yang, Shinhyuk

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Showing results 1 to 33 of 33

1	Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho, Doo-Hee; Park, Sang-Hee Ko; Byun, Chunwon; Ryu, Min Ki; Yang, Shinhyuk; Hwang, Chi-Sun; Yoon, Sung Min; et al, IEICE TRANSACTIONS ON ELECTRONICS, v.E92C, no.11, pp.1340 - 1346, 2009-11
2	Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate Yoon, Sung-Min; Jung, Soon-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Yu, Byoung-Gon; Ishiwara, Hiroshi, CURRENT APPLIED PHYSICS, v.11, no.3, pp.219 - 224, 2011-05
3	Channel Protection Layer Effect on the Performance of Oxide TFTs Park, Sang-Hee Ko; Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Hwang, Chi-Sun; Yoon, Sung Min; Cheong, Woo-Seok; et al, ETRI JOURNAL, v.31, no.6, pp.653 - 659, 2009-12
4	Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics Ji, Kwang Hwan; Kim, Ji-In; Mo, Yeon-Gon; Jeong, Jong Han; Yang, Shinhyuk; Hwang, Chi-Sun; Park, Sang-Hee Ko; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.12, pp.1404 - 1406, 2010-12
5	Device reliability under electrical stress and photo response of oxide TFTs Park, Sang-Hee Ko; Ryu, Min-Ki; Yoon, Sung-Min; Yang, Shinhyuk; Hwang, Chi-Sun; Jeon, Jae-Hong, JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.18, no.10, pp.779 - 788, 2010-10
6	Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor Seo, Seung-Bum; Park, Han-Sung; Jeon, Jae-Hong; Choe, Hee-Hwan; Seo, Jong-Hyun; Yang, Shinhyuk; Park, Sang-Hee Ko, THIN SOLID FILMS, v.547, no.29, pp.263 - 266, 2013-11
7	Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors Bak, Jun Yong; Yoon, Sung Min; Yang, Shinhyuk; Kim, Gi Heon; Park, Sang-Hee Ko; Hwang, Chi-Sun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4, 2012-07
8	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong, Woo-Seok; Lee, Jeong-Min; Yoon, Sung Min; Lee, Jong-Ho; Yang, Shinhyuk; Chung, Sung Mook; Cho, Kyoung Ik; et al, ETRI JOURNAL, v.31, no.6, pp.660 - 666, 2009-12
9	Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material Oh, Himchan; Park, Sang-Hee Ko; Hwang, Chi-Sun; Yang, Shinhyuk; Ryu, Min Ki, APPLIED PHYSICS LETTERS, v.99, no.2, 2011-07
10	Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator Yang, Shinhyuk; Lee, Jeong-Ik; Park, Sang-Hee Ko; Cheong, Woo-Seok; Cho, Doo-Hee; Yoon, Sung-Min; Byun, Chun-Won; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.446 - 448, 2010-05
11	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong, Woo-Seok; Hwang, Chi-Sun; Shin, Jae-Heon; Park, Sang-Hee Ko; Yoon, Sung-Min; Cho, Doo-Hee; Ryu, Minki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.473 - 477, 2009-01
12	Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel Yoon, Sung-Min; Yang, Shinhyuk; Park, Sang-Hee Ko, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.9, pp.892 - 896, 2011
13	Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 degrees C Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chunwon; Park, Sang-Hee K.; Cho, Doo-Hee; Jung, Soon-Won; Kwon, Oh-Sang; et al, ADVANCED FUNCTIONAL MATERIALS, v.20, no.6, pp.921 - 926, 2010-03
14	High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.7, 2009-08
15	High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.144 - 146, 2010-02
16	Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors Jeong, Jae Kyeong; Yang, Shinhyuk; Cho, Doo-Hee; Park, Sang-Hee Ko; Hwang, Chi-Sun; Cho, Kyoung Ik, APPLIED PHYSICS LETTERS, v.95, no.12, 2009-09
17	Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.17, 2009-10
18	Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation Oh, Himchan; Park, Sang-Hee Ko; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Kwon, Oh Sang, ETRI JOURNAL, v.34, no.2, pp.280 - 283, 2012-04
19	Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.96, no.21, 2010-05
20	Light Response of Top Gate InGaZnO Thin Film Transistor Park, Sang-Hee Ko; Ryu, Minki; Yoon, Sung Min; Yang, Shinhyuk; Hwang, Chi-Sun; Jeon, Jae-Hong; Kim, Kyounghwan, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3, 2011-03
21	Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung-Min; Ryu, Min Ki; Oh, Himchan; Hwang, Chi-Sun; Kim, Gi Heon; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.12, pp.1692 - 1694, 2011-12
22	Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures Bak, Jun Yong; Yang, Shinhyuk; Ryu, Ho-Jun; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.79 - 86, 2014-01
23	Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell Yoon, Sung-Min; Byun, Chun-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Cho, Doo-Hee; Jung, Soon-Won; Kang, Seung-Youl; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.138 - 140, 2010-02
24	Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03
25	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07
26	Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor Oh, Himchan; Yoon, Sung-Min; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Park, Sang-Hee Ko, APPLIED PHYSICS LETTERS, v.97, no.18, 2010-11
27	See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Min-Ki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1494 - 1499, 2011-05
28	Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment Yang, Shinhyuk; Ji, Kwang Hwan; Kim, Un Ki; Hwang, Cheol Seong; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; et al, APPLIED PHYSICS LETTERS, v.99, no.10, 2011-09
29	Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor Oh, Himchan; Yoon, Sung-Min; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Park, Sang-Hee Ko, APPLIED PHYSICS LETTERS, v.98, no.3, 2011-01
30	Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature Cho, Doo-Hee; Yang, Shinhyuk; Byun, Chunwon; Shin, Jaeheon; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, APPLIED PHYSICS LETTERS, v.93, no.14, 2008-10
31	Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel Park, Sang-Hee K.; Hwang, Chi-Sun; Ryu, Minki; Yang, Shinhyuk; Byun, Chunwon; Shin, Joeheon; Lee, Jeong-Ik; et al, ADVANCED MATERIALS, v.21, no.6, pp.678 - 678, 2009-02
32	Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Park, Sang-Hee Ko; Byun, Chunwon; Yoon, Sung Min; Chu, Hye-Yong; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.48 - 50, 2009-01
33	Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors Yang, Shinhyuk; Hwang, Chi-Sun; Lee, Jeong-Ik; Yoon, Sung-Min; Ryu, Min-Ki; Cho, Kyoung-Ik; Park, Sang-Hee Ko; et al, APPLIED PHYSICS LETTERS, v.98, no.10, 2011-03

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