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Showing results 1 to 12 of 12

1
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

Noh, Ji-Young; Kim, Hanchul; Nahm, Ho-Hyun; Kim, Yong-Sung; Kim, Dae Hwan; Ahn, Byung-Du; Lim, Jun-Hyung; et al, JOURNAL OF APPLIED PHYSICS, v.113, no.18, 2013-05

2
Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

Han, W. H.; Oh, Young Jun; Chang, Kee-Joo; Park, Ji-Sang, PHYSICAL REVIEW APPLIED, v.3, no.4, pp.044008, 2015-04

3
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09

4
Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

Kang, Youngho; Ahn, Byung Du; Song, Ji Hun; Mo, Yeon Gon; Nahm, Ho Hyun; Han, Seungwu; Jeong, Jae Kyeong, ADVANCED ELECTRONIC MATERIALS, v.1, no.7, 2015-07

5
Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

Nahm, Ho-Hyun; Kim, Yong-Sung; Kim, Dae Hwan, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.249, no.6, pp.1277 - 1281, 2012-06

6
Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

Kang, Youngho; Song, Hochul; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi; Han, Seungwu, APL MATERIALS, v.2, no.3, 2014-03

7
Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity

Kang, Youngho; Nahm, Ho-Hyun; Han, Seungwu, SCIENTIFIC REPORTS, v.6, 2016-10

8
Metal-induced n(+)/n homojunction for ultrahigh electron mobility transistors

Park, Ji-Min; Kim, Hyoung-Do; Joh, Hongrae; Jang, Seong Cheol; Park, Kyung; Park, Yun Chang; Nahm, Ho-Hyun; et al, NPG ASIA MATERIALS, v.12, no.1, pp.81, 2020-12

9
Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability

Nahm, Ho-Hyun; Kim, Yong-Sung, APPLIED PHYSICS LETTERS, v.102, no.15, 2013-04

10
Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors

Han, Woo Hyun; Chang, Kee Joo, PHYSICAL REVIEW APPLIED, v.6, no.4, pp.044011 - 044011, 2016-10

11
THIN-FILM TRANSISTORS WITH POLYCRYSTALLINE SILICON PREPARED BY A NEW ANNEALING METHOD

NAM, KS; SONG, YH; BAEK, JT; Kong, Hong-Jin; LEE, SS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.32, no.5A, pp.1908 - 1912, 1993-05

12
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

Nahm, Ho-Hyun; Kim, Yong-Sung, NPG ASIA MATERIALS, v.6, 2014-11

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