Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

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Undercoordinated indium (In*) is found to be an intrinsic defect that acts as a strong electron trap in amorphous InGaZnO4. Conduction electrons couple with the under-coordinated In* via Coulomb attraction, which is the driving force for the formation of an In*-M (M=In, Ga, or Zn) bond. The new structure is stable in the electron-trapped (2-) charge state, and we designate it as an intrinsic (In*-M)(2-) center in amorphous InGaZnO4. The (In*-M)(2-) centers are preferentially formed in heavily n-doped samples, resulting in a doping limit. They are also formed by electrical/optical stresses, which generate excited electrons, resulting in a metastable change in their electrical properties.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2014-11
Language
English
Article Type
Article
Keywords

GA-ZN-O; THIN-FILM TRANSISTORS; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; OXIDE SEMICONDUCTOR; DX CENTERS; INSTABILITY; ALXGA1-XAS; STRESS; ORIGIN

Citation

NPG ASIA MATERIALS, v.6

ISSN
1884-4049
DOI
10.1038/am.2014.103
URI
http://hdl.handle.net/10203/228669
Appears in Collection
NT-Journal Papers(저널논문)
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