Browse "EE-Journal Papers(저널논문)" by Subject HIGH-MOBILITY

Showing results 1 to 14 of 14

1
A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Hur, Ji-Hyun; Park, Junghak; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.6, 2017-02

2
Ar plasma treated ZnON transistor for future thin film electronics

Lee, Eunha; Kim, Taeho; Benayad, Anass; Kim, HeeGoo; Jeon, Sanghun; Park, Gyeong-Su, APPLIED PHYSICS LETTERS, v.107, no.12, 2015-09

3
Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery

Jeong, Yonghee; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, JOURNAL OF ELECTRONIC MATERIALS, v.52, no.6, pp.3914 - 3920, 2023-06

4
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Hwang, Wan Sik; Remskar, Maja; Yan, Rusen; Kosel, Tom; Park, Jong Kyung; Cho, Byung Jin; Haensch, Wilfried; et al, APPLIED PHYSICS LETTERS, v.102, no.4, 2013-01

5
Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors

Park, Sungho; Park, Sekyoung; Ahn, Seung-Eon; Song, Ihun; Chae, Wonseok; Han, Manso; Lee, Jeseung; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.5, 2013-09

6
Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 degrees C) microwave annealing for flexible electronics

Jung, Taeseung; Han, Jung Hoon; Nam, Sooji; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.41, no.3, 2023-05

7
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

Shim, Jaewoo; Kim, Hyo Seok; Shim, Yoon Su; Kang, Dong-Ho; Park, Hyung-Youl; Lee, Jaehyeong; Jeon, Jaeho; et al, ADVANCED MATERIALS, v.28, no.26, pp.5293 - +, 2016-07

8
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure

Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01

9
Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability

Park, Hamin; Oh, Dong Sik; Hong, Woonggi; Kang, Juyeon; Lee, Geon-Beom; Shin, Gwang Hyuk; Choi, Yang-Kyu; et al, ADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599, 2021-07

10
Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun, PHYSICAL REVIEW APPLIED, v.7, no.4, 2017-04

11
Organic flash memory on various flexible substrates for foldable and disposable electronics

Lee, Seungwon; Seong, Hyejeong; Im, Sung Gap; Moon, Hanul; Yoo, Seunghyup, NATURE COMMUNICATIONS, v.8, pp.725, 2017-09

12
Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation

Choi, Junhwan; Yoon, Jongsun; Kim, Min Ju; Pak, Kwanyong; Lee, Changhyeon; Lee, Haechang; Jeong, Kihoon; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29113 - 29123, 2019-07

13
TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Shim, Gi Woong; Hong, Woonggi; Cha, Jun-Hwe; Park, Jung Hwan; Lee, Keon Jae; Choi, Sung-Yool, ADVANCED MATERIALS, v.32, no.35, pp.1907133, 2020-09

14
Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11

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