TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

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As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2020-09
Language
English
Article Type
Article
Citation

ADVANCED MATERIALS, v.32, no.35, pp.1907133

ISSN
0935-9648
DOI
10.1002/adma.201907166
URI
http://hdl.handle.net/10203/278144
Appears in Collection
EE-Journal Papers(저널논문)MS-Journal Papers(저널논문)
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