Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism
A WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 x 10(7) at 180 K (3 x 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point
- Publisher
- WILEY-V C H VERLAG GMBH
- Issue Date
- 2016-07
- Language
- English
- Article Type
- Article
- Citation
ADVANCED MATERIALS, v.28, no.26, pp.5293 - +
- ISSN
- 0935-9648
- Appears in Collection
- EE-Journal Papers(저널논문)
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