Browse "EE-Journal Papers(저널논문)" by Author Ryu, Seong-Wan
Showing results 1 to 25 of 25
| A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sung-Ho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.632 - 634, 2008-06 |
| A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM Bae, Dong-Il; Ryu, Seong-Wan; Gu, Bonsang; Choi, Yang-Kyu, MICROELECTRONIC ENGINEERING, v.87, no.2, pp.135 - 138, 2010-02 |
| A study of the memory effects of metallic core-metal oxide shell nanocrystals by a micelle dipping technique Kim, Chung-Jin; Choi, Sung-Jin; Ryu, Seong-Wan; Kim, Sung-Ho; Chang, Jae-Joon; Bae, Su-Hak; Sohn, Byeong-Hyeok; et al, NANOTECHNOLOGY, v.21, no.12, 2010-03 |
| A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications Ryu, Seong-Wan; Choi, Yang-Kyu; Bin Mo, Chan; Hong, Soon-Hyung; Park, Pan Kwi; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01 |
| Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application Ryu, Seong-Wan; Lee, Jong-Won; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382, 2009-03 |
| Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04 |
| Extremely scaled 3-dimensional multiple-gate technologies for terabit era Choi, Yang-Kyu; Kim, Kuk-Hwan; Han, Jin-Woo; Ryu, Seong-Wan; Lee, Hyunjin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.7, no.11, pp.4126 - 4130, 2007-11 |
| Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Seo, Myung-Soo; Yun, Chang-Hun; Yoo, Seung-Hyup; Choi, Yang-Kyu, SMALL, v.6, no.15, pp.1617 - 1621, 2010-08 |
| Fully Depleted Polysilicon TFTs for Capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Kim, Chung-Jin; Kim, Sung-Ho; Moon, Dong-Il; Choi, Sung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.742 - 744, 2009-07 |
| Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02 |
| Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate Lee, Jong-Won; Ryu, Seong-Wan; Shin, Dong Ok; Kim, Bong Hoon; Kim, Sang Ouk; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643, 2009-06 |
| Gold nanoparticle embedded silicon nanowire biosensor for applications of label-free DNA detection Ryu, Seong-Wan; Kim, Chang-Hoon; Han, Jin-Woo; Kim, Chung-Jin; Jung, Cheul-Hee; Park, Hyun-Gyu; Choi, Yang-Kyu, BIOSENSORS BIOELECTRONICS, v.25, no.9, pp.2182 - 2185, 2010-05 |
| Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02 |
| Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05 |
| Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3232 - 3235, 2009-12 |
| Itinerant Helimagnetic Single-Crystalline MnSi Nanowires Seo, Kwan-Yong; Yoon, Ha-Na; Ryu, Seong-Wan; Lee, Sung-Hun; Jo, Young-Hun; Jung, Myung-Hwa; Kim, Jin-Hee; et al, ACS NANO, v.4, no.5, pp.2569 - 2576, 2010-05 |
| Metal nanocrystals synthesized with a micellar template based on a diblock copolymer for three-dimensional nonvolatile memory Kim, Chung-Jin; Ryu, Seong-Wan; Choi, Yang-Kyu; Chang, Jae-Joon; Bae, Su-Hak; Sohn, Byeong-Hyeok, APPLIED PHYSICS LETTERS, v.93, no.5, 2008-08 |
| Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface Gupta, Dipti; Anand, Manish; Ryu, Seong-Wan; Choi, Yang-Kyu; Yoo, Seunghyup, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
| Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03 |
| Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07 |
| Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03 |
| Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
| Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03 |
| Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application Ryu, Seong-Wan; Huang, Xing-Jiu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858, 2007-08 |
| Wet chemical needlelike assemblies of single-walled carbon nanotubes on a silicon surface Huang, Xing-Jiu; Ryu, Seong-Wan; Im, Hyung-Soon; Choi, Yang-Kyu, LANGMUIR, v.23, no.3, pp.991 - 994, 2007-01 |
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