A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

Abstract

This paper presents a detailed study on the effect of different thicknesses of HfO2 high-k interfacial layer between double-stacked layers of Ag nanocrystals formed by a chemical synthesis and thermal decomposition method. To confirm the formation and purity of the well-ordered Ag nanocrystals with a high density (2.7x10(12) cm(-2)), transmission electron microscopy and x-ray diffraction analysis were used. After fabricating metal-oxide-silicon structures with 2 and 6 nm interfacial HfO2 and the double-stacked Ag nanocrystals, a program efficiency and retention time characteristics were investigated.