Browse "EE-Journal Papers(저널논문)" by Author Goh, Youngin
Showing results 1 to 21 of 21
| A method of controlling the imprint effect in hafnia ferroelectric device Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; Jeong, Yeongseok; Kim, Giuk; Qin, Yixin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01 |
| Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08 |
| Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 |
| Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp.3264 - 3268, 2018-08 |
| Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices Lim, Sehee; Goh, Youngin; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Jeong, Yeongseok; Shin, Hunbeom; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870, 2023-07 |
| Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08 |
| Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845, 2021-02 |
| Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Park, Sang-Hee Ko; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10 |
| Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier Kim, Minki; Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12 |
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing Goh, Youngin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07 |
| Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12 |
| First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates Goh, Youngin; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09 |
| Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing Joh, Hongrae; Jung, Minhyun; Hwang, Junghyeon; Goh, Youngin; Jung, Taeseung; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1326 - 1333, 2022-01 |
| Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo, Jiyong; Goh, Youngin; Im, Solyee; Hwang, Jeong Hyeon; Kim, Yeriaron; Kim, Jeong Hun; Im, Jong-Pil; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02 |
| Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04 |
| Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
| Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; Kim, Taeho; Goh, Youngin; Lee, Yongsun; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06 |
| Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Lee, Yongsun; Jung, Minhyun; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12 |
| Sub-60-mV / decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor Ko, Eunah; Lee, Hyunjae; Goh, Youngin; Jeon, Sanghun; Shin, Changhwan, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.306 - 309, 2017-09 |
| The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 |
| The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02 |
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