The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

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Ferroelectric tunnel junctions (FIJs) have attracted research interest as promising candidates for non-destructive readout non-volatile memories. Unlike conventional perovskite FTJs, hafnia FTJs offer many advantages in terms of scalability and CMOS compatibility. However, so far, hafnia FTJs have shown poor endurance and relatively low resistance ratios and these have remained issues for real device applications. In our study, we fabricated HfZrO(HZO)-based FTJs with various electrodes (TiN, Si, SiGe, Ge) and improved the memory performance of HZO-based FTJs by using the asymmetry of the charge screening lengths of the electrodes. For the HZO-based FTJ with a Ge substrate, the effective barrier afforded by this FTJ can be electrically modulated because of the space charge-limited region formed at the ferroelectric/semiconductor interface. The optimized HZO-based FTJ with a Ge bottom electrode presents excellent ferroelectricity with a high remnant polarization of 18 mu C cm(-2), high tunneling electroresistance value of 30, good retention at 85 degrees C and high endurance of 10(7). The results demonstrate the great potential of HfO2 -based FTJs in non-destructive readout non-volatile memories.
Publisher
IOP PUBLISHING LTD
Issue Date
2018-08
Language
English
Article Type
Article
Keywords

ELECTRORESISTANCE; FILMS

Citation

NANOTECHNOLOGY, v.29, no.33

ISSN
0957-4484
DOI
10.1088/1361-6528/aac6b3
URI
http://hdl.handle.net/10203/243680
Appears in Collection
EE-Journal Papers(저널논문)
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2018 Nanotechnology CMOS Compatible Hafnia Ferroelectirc Tunnel Junction.pdf(3.22 MB)Download
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