Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices

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Hafnia-based ferroelectric (FE) devices have attracted significant attention as nonvolatile memory devices due to their compatibility with complementary metal- oxide-semiconductor processes. Among them, the FE tunnel junction (FTJ) has been considered as the next-generation of nonvolatile memory devices owing to its neuromorphic characteristics and nondestructive read operation as well as the high-density integration. However, degradation of ferroelectricity in a thin hafnia film causes a reduced tunneling electroresistance (TER) ratio. In this work, we inserted a TiO2 layer into the metal-FE-metal capacitor to provide an asymmetric structure for FTJ operations and recorded the enhanced remnant polarization with enhanced ferroelectricity. In this study, a high 2P(r) value of 44.4 mu C/cm(2) and a notable TER ratio of 11.6 were observed for 6-nm thick hafnia films with 1-nm thick TiO2 films.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2021-02
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845

ISSN
0018-9383
DOI
10.1109/TED.2020.3043728
URI
http://hdl.handle.net/10203/281465
Appears in Collection
EE-Journal Papers(저널논문)
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