Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

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The various structures of ferroelectric tunnel junctions (FTJs) are widely studied. Among them, metal-ferroelectric-semiconductor (MFS) FTJs show great tunneling electroresistance (TER) ratio by forming a depletion region. However, the poor ferroelectricity of hafnia on semiconductor electrodes degrades the TER ratio. This study employed high-pressure annealing with forming gas to improve the ferroelectric properties of MFS FTJs. We achieved a high 2Pr value (47.54 mu c/cm(2)) and large TER ratio (22) in MFS FTJ for a 6 nmthick hafnia layer annealed at high pressure (200 atm) with forming gas. This work helps improve the quality of interface between a semiconductor and ferroelectric layer to increase the ferroelectricity of MFS stack devices.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-08
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196

ISSN
0741-3106
DOI
10.1109/LED.2020.3001639
URI
http://hdl.handle.net/10203/275843
Appears in Collection
EE-Journal Papers(저널논문)
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