Showing results 7 to 22 of 22
Effects of Ir electrodes on the dielectric constants of Ba0.5Sr0.5TiO3 films Cha, SY; Jang, BT; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.38, no.1AB, pp.49 - 51, 1999-01 |
EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS Yoon, Giwan; JOSHI, AB; KWONG, DL; MATHEWS, VK; THAKUR, RPS; FAZAN, PC, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.3, pp.347 - 351, 1994-03 |
Elaborate Refresh: A Fine Granularity Retention Management for Deep Submicron DRAMs Seol, Hoseok; Shin, Wongyu; Jang, Jaemin; Choi, Jungwhan; Lee, Hakseung; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.67, no.10, pp.1403 - 1415, 2018-10 |
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04 |
Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel Moon, Dong-Il; Kim, Jee Yeon; Moon, Joon-Bae; Kim, Dong-Oh; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65, 2014-01 |
Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09 |
Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure![]() Bae, Hagyoul; Lee, Geon Beom; Hur, Jae; Park, Jun Young; Kim, Da Jin; Kim, Myung Su; Choi, Yang-Kyu, MICROMACHINES, v.12, no.8, 2021-07 |
Q-DRAM: Quick-Access DRAM with Decoupled Restoring from Row-Activation Shin, Wongyu; Choi, Jung Whan; Jang, Jaemin; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Hongsik; et al, IEEE TRANSACTIONS ON COMPUTERS, v.65, no.7, pp.2213 - 2227, 2016-07 |
Rank-Level Parallelism in DRAM Shin, Wongyu; Jang, Jaemin; Choi, Jungwhan; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.66, no.7, pp.1274 - 1280, 2017-07 |
Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
Refresh-Aware Write Recovery Memory Controller Jang, Jaemin; Shin, Wongyu; Choi, Jungwhan; Suh, Jinwoong; Kwon, Yongkee; Kim, Yongju; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.66, no.4, pp.688 - 701, 2017-04 |
Resistive-Memory Embedded Unified RAM (R-URAM) Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674, 2009-11 |
Signal Integrity and Computing Performance Analysis of a Processing-In-Memory of High Bandwidth Memory (PIM-HBM) Scheme Kim, Seongguk; Kim, Subin; Cho, Kyungjun; Shin, Taein; Park, Hyunwook; Lho, Daehwan; Park, Shinyoung; et al, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.11, no.11, pp.1955 - 1970, 2021-11 |
Sparse-Insertion Write Cache to Mitigate Write Disturbance Errors in Phase Change Memory Jang, Jaemin; Shin, Wongyu; Choi, Jungwhan; Kim, Yongju; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.68, no.5, pp.752 - 764, 2019-05 |
Thermal and Signal Integrity Co-Design and Verification of Embedded Cooling Structure With Thermal Transmission Line for High Bandwidth Memory Module Son, Keeyoung; Kim, Seongguk; Park, Hyunwook; Shin, Taein; Kim, Keunwoo; Kim, Minsu; Sim, Boogyo; et al, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.12, no.9, pp.1542 - 1556, 2022-09 |
TRiM: Tensor Reduction in Memory![]() Kim, Byeongho; Park, Jaehyun; Lee, Eojin; Rhu, Minsoo; Ahn, Jung Ho, IEEE COMPUTER ARCHITECTURE LETTERS, v.20, no.1, pp.5 - 8, 2021-01 |
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