Browse "EE-Conference Papers(학술회의논문)" by Author Joo, MS
Showing results 1 to 19 of 19
| ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11 |
| Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation Cho, Byung Jin; Loh, WY; Joo, MS; Li, MF; Chan, DSH; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process Cho, Byung Jin; Joo, MS; Chi, DZ; Balasubramanian, N; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14 |
| Channel mobility behaviour in high-K/metal gate NMOSFETs Cho, Byung Jin; Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS, 2nd International Conference on Materials for Advanced Technologies, pp.516 - 516, 2003-12-11 |
| Correlation between interface traps and gate laeakage in ultra-thin silicon dioxide Cho, Byung Jin; Loh, WY; Li, MF; Lek, CM; Yong, YF; Joo, MS, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.246 - 246, 2002-07-08 |
| Effect of electron-beam lithography on thin gate oxide reliability Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS, 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.55 - 55, 2001-07-09 |
| Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11 |
| Enhancement of high temperature data retention by La2O3-doped nitride for charge-trap type flash memory device Park, JK; Park, Y; Lee, Seok-Hee; Lim, SK; Oh, JS; Joo, MS; Hong, K; et al, 제18회 한국반도체학술대회, 한국물리학회 반도체분과회, 한국재료학회, 대한전기학회 전기재료 연구회, 2011-02 |
| Evaluation of SOHOS (polysilicon-oxide-high-K-oxide-silicon) structure for Flash memory device application Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Joo, MS; Ng, TH, International Conference on Materials for Advanced Technologies, pp.19 - 20, 2005-07-03 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool Cho, Byung Jin; Yeo, CC; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S, International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| Integrity of gate oxides irradiated under electron-beam lithography conditions Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08 |
| MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19 |
| New breakdown mechanism of ultra thin gate oxides under ballistic transport Cho, Byung Jin; Lee, SH; Joo, MS; Park, YJ; Kim, JC, 1st Korean Semiconductor Tech. Symp., pp.0 - 0, 1994-02-15 |
| Novel oxynitridation technology for highly reliable thin dielectrics Cho, Byung Jin; Joo, MS; Lee, SH; Lee, SK; KIm, JC; Choi, SH, Symp. on VLSI Tech., pp.107 - 107, 1995-06-07 |
| Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11 |
| Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05 |
| Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack Cho, Byung Jin; Joo, MS; Balasubramanian, N; Kwong, DL, International Conference on Materials for Advanced Technologies, pp.40 - 40, 2005-07-03 |
| Very light nitridation of thin gate oxide in low pressure N2O Cho, Byung Jin; Joo, MS; Lee, SH; Kim, JC; Choi, SH, 3rd Symp. on Silicon Nitride and Silicon Dioxide Thin Insulation Films, pp.458 - 458, 1994-05-08 |
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