Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictionsRadiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

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Issue Date
1999-07-05
Language
ENG
Citation

Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30

URI
http://hdl.handle.net/10203/131547
Appears in Collection
EE-Conference Papers(학술회의논문)
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