DSpace at KOASAS: MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid sourceMOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

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Cho, Byung Jin researcher / Joo, MS / Yeo, CC / Whoang, SJ / Matthew, S / Bera, LK / Balasubramanian, N

Issue Date: 2003-09-19

Language: ENG

Citation: 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0

URI: http://hdl.handle.net/10203/146369

Appears in Collection: EE-Conference Papers(학술회의논문)

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