A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

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Recently, localized thermal annealing has been spotlighted as an effective method to cure aged devices. The degraded gate oxide can be successfully cured by local annealing, which utilizes Joule heat inherently generated in the device. But, despite this advantage, there has been no study comparing the curing effects with various other annealing methods. In this study, the curing effects of local annealing and a conventional global annealing method applied to SOI FinFETs are compared. The measured electrical characteristics are discussed to evaluate the damage curing with respect to curing level and variability.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-08
Language
English
Article Type
Article
Citation

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.954 - 958

ISSN
2168-6734
DOI
10.1109/JEDS.2019.2937802
URI
http://hdl.handle.net/10203/269069
Appears in Collection
EE-Journal Papers(저널논문)
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