| 1 | 2.21 mW Low Power Consumption Digitally Controlled Spintronics Oscillator (DCSO) Oh, Inn Yeal; Shin, Mincheol; Park, Chul Soon, 2013 International Microwave Symposium, IEEE, 2013-06 |
| 2 | A 15 mu m-Pitch, 8.7-ENOB, 13-Mcells/sec Logarithmic Readout Circuit for Multi-Level Cell Phase Change Memory Jin, Dong-Hwan; Kwon, Ji-Wook; Kim, Hyeon-June; Hwang, Sun-Il; Shin, Mincheol; Cheon, Junho; Ryu, Seung-Tak, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.50, no.10, pp.2431 - 2440, 2015-10 |
| 3 | A 6.4Gbps On-chip Eye Opening Monitor Circuit for Signal Integrity Analysis of High Speed Channel Kim, Joungho; Shin, Mincheol; Shim, Jongjoo; Kim, Jaemin; Pak, Jun So; Hwang, Chulsoon; Yoon, Changwook; et al, Presented at Proceeding of 2008 IEEE EMC Symposium, pp.1 - 7, 2008-08 |
| 4 | A novel ferroelectric nanopillar multi-level cell memory LEE, Hyeon-Gu; Shin, Mincheol, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2022, SISPAD, 2022-09 |
| 5 | A novel ferroelectric nanopillar multi-level cell memory Lee, Hyeongu; Shin, Mincheol, SOLID-STATE ELECTRONICS, v.200, 2023-02 |
| 6 | A Novel Machine-Learning Based Mode Space Method for Efficient Device Simulations Lim, Yeongjun; Shin, Mincheol, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, The Japan Society of Applied Physics, The IEEE Electron Devices Society, 2023-09 |
| 7 | A Novel Neural-Network Device Modeling Based on Physics-Informed Machine Learning Kim, Bokyeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.11, pp.6021 - 6025, 2023-11 |
| 8 | A Study of Performance Enhancement in Uniaxial Stressed Silicon Nanowire Field Effect Transistors Jung, Hyo Eun; Shin, Mincheol; Jeong, Woo-Jin, SISPAD 2014, SISPAD, 2014-09-09 |
| 9 | A Study of Performance in Biaxially Strained Single-Layer Black Phosphorus FET Seo, Junbeom; Lee, Jaehyun; Oh, Jung Hyun; Shin, Mincheol, AWAD2016, AWAD, 2016-07-05 |
| 10 | A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06 |
| 11 | A Variability Study of Ferroelectric Tunnel Junction Shin, Mincheol; Seo, Junbeom; Jeon, Seong Hyeok, WINDS 2018, WINDS 2018, 2018-11-30 |
| 12 | (A) study of Gate-All-Around nanowire transistor with IGZO channel by TCAD simulations = IGZO 채널을 적용한 Gate-All-Around nanowire 트랜지스터 TCAD 시뮬레이션 연구link Oh, Jeongho; 오정호; et al, 한국과학기술원, 2024 |
| 13 | (A) study of phonon-limited quantum transport of silicon nanowire FETs = 포논-전자 상호작용을 반영한 실리콘 나노와이어 트랜지스터의 양자 수송에 대한 연구link Lee, Hyeongu; Shin, Mincheol; et al, 한국과학기술원, 2019 |
| 14 | (A) study on the performance improvement of devices by band engineering with inserting dipole formation layer = 쌍극자 형성층 삽입을 통한 밴드 엔지니어링 및 이를 이용한 소자의 성능 향상 연구link Lim, Yeongjun; Shin, Mincheol; et al, 한국과학기술원, 2022 |
| 15 | Additional Coulomb blockade and negative differential conductance in closed two-dimensional tunnel junction arrays Shin, Mincheol; Lee, SJ; Park, KW; Lee, E, JOURNAL OF APPLIED PHYSICS, v.84, no.5, pp.2974 - 2976, 1998-09 |
| 16 | An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs Huh, In; Park, Sangchun; Shin, Mincheol; Choi, Woo Young, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3502 - 3507, 2017-08 |
| 17 | An Efficient Method for Atomistic-Level Non-Equilibrium Green’s Function Simulations of Field-Effect Transistors Involving Heterostructures Ahn, Yongsoo; Shin, Mincheol; KIM, BOKYEOM, IWCN2019, IWCN2019, 2019-05-22 |
| 18 | (An) efficient method for non-equilibrium green's function simulations and applications to atomistic-level FETs = 비평형 그린함수 계산을 위한 효율적 방법론 개발 및 원자 수준 트랜지스터에의 응용link Ahn, Yongsoo; Shin, Mincheol; et al, 한국과학기술원, 2019 |
| 19 | (An) efficient methodology for atomic-level device simulations = 효율적인 원자 단위 소자 시뮬레이션을 위한 방법론 연구link Jeong, Woo Jin; Shin, Mincheol; et al, 한국과학기술원, 2020 |
| 20 | Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications Seo, Junbeom; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.4, pp.1793 - 1798, 2017-04 |
| 21 | Analysis of magnetic tunnel junction-based spin-torque oscillator using NEGF-LLGS calculation = NEGF-LLGS 계산을 통한 자기터널접합 기반 스핀 발진소자의 분석link Noh, Seongcheol; 노성철; et al, 한국과학기술원, 2016 |
| 22 | Analysis of power/ground noise effect on performance degradation of analog-to-digital converter Ahn, W.; Shim, J.; Cho, J.; Shin, Mincheol; Koo, K.; Kim, Joungho, 2009 11th Electronic Packaging Technology Conference, EPTC 2009, pp.687 - 691, 123, 2009-12-09 |
| 23 | ''Synchronization by electrical coupling of parallel-connected spin torque nano-oscillators Shin, Mincheol; Kang, Doo Hyung, Nano Korea 2017, Nano Korea 2017, 2017-07-14 |
| 24 | Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach Kim, Bokyeom; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468, 2020-02 |
| 25 | Asymmetrically oxidized interface layer effect of HfO2-based ferroelectric tunnel junctions Kim, Moonhoi; Shin, Mincheol; Seo, Junbeom, Nano Korea 2018, Ministry of Science and ICT, Ministry of Trade, Industry & Energy, 2018-07-13 |
| 26 | Atomistic Asymmetric Effect on the Performance of HfO2-based Ferroelectric Tunnel Junctions Seo, Junbeom; Shin, Mincheol, PHYSICAL REVIEW APPLIED, v.14, no.5, 2020-11 |
| 27 | Atomistic modeling and quantum transport simulation of nano-scaled devices based on the density functional theory Hamiltonian = 밀도 범함수 이론 해밀토니안을 기반으로 한 나노 소자의 원자 수준 모델링 및 양자 수송 시뮬레이션 연구link Jeon, Seonghyeok; 전성혁; et al, 한국과학기술원, 2023 |
| 28 | Atomistic modeling and simulation study for the ferroelectric-based electronic devices = 강유전체 기반 전자 소자의 원자 수준 모델링 및 시뮬레이션 연구link Seo, Junbeom; Shin, Mincheol; et al, 한국과학기술원, 2021 |
| 29 | Atomistic Simulation of GaSb/InAs Ultra-thin-body Tunnel FETs Cho, Yucheol; Shin, Mincheol, Nano Korea 2019, Nano Korea 2019, 2019-07-04 |
| 30 | Backscattering Effects on the Aharonov-Bohm-type Interference Patterns in the Ballistic Limit Shin, Mincheol; Lee, S; Park, KW; Lee, EH, ICSMM-10 (10th International Conference on Superlattices, Microstructure, and Microdevices), ICSMM-10, 1997-07 |
| 31 | Backscattering effects on the Aharonov-Bohm-type interference patterns in the ballistic limit Shin, Mincheol; Lee, S; Park, KW; Lee, EH, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, v.1-2, pp.61 - 64, 1998 |
| 32 | Ballistic quantum transport in nano-scale Schottky barrier tunnel transistors Ahn, C.; Shin, Mincheol, 5th IEEE Conference on Nanotechnology, 2005, v.2, pp.741 - 744, 2005-07-11 |
| 33 | Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors Ahn, C; Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.5, no.3, pp.278 - 283, 2006-05 |
| 34 | Band-Engineering of Silicon Tunnel Field Effect Transistor: A First Principle Study Yeongjun Lim; Shin, Mincheol, NANO KOREA 2021, NANO KOREA, 2021-07-07 |
| 35 | Bayesian optimization of 3-nm node nanosheet FETs KIM, BOKYEOM; Shin, Mincheol, NANO KOREA 2021, NANO KOREA, 2021-07-07 |
| 36 | Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition Kim, Bokyeom; Shin, Mincheol, IEEE ACCESS, v.9, pp.108480 - 108494, 2021-08 |
| 37 | Biaxial Strain based Performance Modulation of Negative-Capacitance FETs Kim, Moonhoi; Shin, Mincheol; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.318 - 322, SISPAD 2018, 2018-09-25 |
| 38 | Calculation of Phonon Transmission in Si/PtSi Heterostructures Oh, junghyun; Jang, MoonGyu; Shin, Mincheol, 18th International Workshop on Computational Electronics, IWCE, 2015-09-04 |
| 39 | Channel engineering of silicon nanowire field effect transistor: Non-equilibrium Green's function study Hong, K.-H.; Kim, J.; Lee, S.-H.; Jin, Y.-G.; Park, S.-I.; Shin, Mincheol; Suk, S.D.; et al, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, pp.1281 - 1283, 2006-10-23 |
| 40 | Characteristics of silicon/silicide hetero-junction structured thermoelectric devices Wonchul Choi; Shin, Mincheol, NANO KOREA 2013, NANO KOREA, 2013-07-11 |
| 41 | Charge solitons in closed two-dimensional tunnel junction arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, SOLID-STATE ELECTRONICS, v.42, no.7-8, pp.1385 - 1389, 1998 |
| 42 | Charge-solitons in Closed One-dimensional Tunnel Arrays Shin, Mincheol; Lee, S; Park, KW; Lee, EH, ICSMM-10, ICSMM-10, 1997-07 |
| 43 | Circuit-Level Memory Cell Simulation of Magnetic Bloch Line Racetrack Memory Lee, Chanhyeong; Kim, Kabjin; Shin, Mincheol, IEEE TRANSACTIONS ON MAGNETICS, v.59, no.8, 2023-08 |
| 44 | Co-tunneling effects on transport in the spin blockade regime Oh, Jung Hyun; Bubanja, Vladimir; Shin, Mincheol; Lee, Seok-Hee, IEEE NANO 2011, IEEE, 2011-08-16 |
| 45 | Comparative study of excess charge approach and electron only approach: DFT based NEGF simulation Jeon, Seong Hyeok; Shin, Mincheol, NANO KOREA 2021, Korea Nanotechnology Research Society, 2021-07-07 |
| 46 | Comparison study between Wigner equation and Schrodinger equation by investigating an interaction between a Gaussian wave packet and a non-reflecting potential Lee, Joon-Ho; Shin, Mincheol, ISPSA 2016, ISPSA, 2016-07-06 |
| 47 | Computational Study of p-type Germanium Nanowire Field Effect Transistors 정주영; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
| 48 | Computational study on the performance of multiple-gate nanowire schottky-barrier MOSFETs Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, pp.737 - 742, 2008-03 |
| 49 | Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09 |
| 50 | Continuous phase shift in the forced interference of edge states in the quantum Hall regime Shin, Mincheol, SOLID STATE COMMUNICATIONS, v.122, no.9, pp.489 - 492, 2002 |
| 51 | Coulomb blockade by electron-hole pairs in coupled single-electron transistors Shin, Mincheol; Lee, S; Park, KW; Kim, GH, PHYSICAL REVIEW B, v.62, no.15, pp.9951 - 9954, 2000-10 |
| 52 | Coulomb blockade gap and coulomb staircase of a new type in various tunnel-junction arrays with two branches Shin, Mincheol; Lee, S; Park, KW; Lee, EH, SUPERLATTICES AND MICROSTRUCTURES, v.25, no.1-2, pp.279 - 284, 1999 |
| 53 | Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces Park, KH; Ha, JS; Yun, WS; Shin, Mincheol; Ko, YJ, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.18, no.5, pp.2365 - 2370, 2000 |
| 54 | Coupled Multiple Physics-informed Deep Operator Networks for Boltzmann Transport Simulations of Nanowire Field Effect Transistors Kim Bokyeom; Shin, Mincheol, 7th IEEE Electron Devices Technology and Manufacturing Conference, IEEE, 2023-03-07 |
| 55 | Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques Kang, Doo Hyung; Shin, Mincheol, SCIENTIFIC REPORTS, v.11, no.1, pp.22842, 2021-11 |
| 56 | Critical switching current of a perpendicular magnetic tunnel junction owing to the interplay of spin-transfer torque and spin-orbit torque Kang, Doo Hyung; Byun, Ji-Hun; Shin, Mincheol, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.43, 2021-10 |
| 57 | Crossover behavior of the conductance oscillations in a quasi-one-dimensional ring in the ballistic limit Shin, Mincheol; Park, KW; Lee, S; Lee, EH, PHYSICAL REVIEW B, v.53, no.3, pp.1014 - 1017, 1996-01 |
| 58 | Data-free Physics-informed Neural Networks for Boltzmann Transport Equation Kim, Bo-Kyeom; Shin, Mincheol, NANO KOREA 2022, Korea Nanotechnology Research Society, 2022-07-06 |
| 59 | Density functional theory based modeling and quantum transport simulations on uniaxially strained black phosphorus FETs = 단축 변형된 흑린 구조에 대한 밀도 범함수 기반 모델링 및 양자 수송 시뮬레이션link Jung, Sungwoo; Shin, Mincheol; et al, 한국과학기술원, 2018 |
| 60 | Density functional theory based simulations of silicon nanowire field effect transistors Shin, Mincheol; Jeong, Woo Jin; Lee, Jaehyun, JOURNAL OF APPLIED PHYSICS, v.119, no.15, pp.154505-1 - 154505-10, 2016-04 |
