Browse "School of Electrical Engineering(전기및전자공학부)" by Author Oh, Jae-Sub
Showing results 1 to 19 of 19
| A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sung-Ho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.632 - 634, 2008-06 |
| A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory Moon, Dong-Il; Kim, Jee-Yeon; Jang, Hyunjae; Hong, Hee-Jeong; Kim, Choong Ki; Oh, Jae-Sub; Kang, Min-Ho; et al, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1236 - 1238, 2014-12 |
A SONOS device with a separated charge trapping layer for improvement of charge injection Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; et al, AIP ADVANCES, v.7, no.3, 2017-03 |
| A sub-1-volt nanoelectromechanical switching device Lee, Jeong-Oen; Song, Yong-Ha; Kim, Min-Wu; Kang, Min-Ho; Oh, Jae-Sub; Yang, Hyun-Ho; Yoon, Jun-Bo, NATURE NANOTECHNOLOGY, v.8, no.1, pp.36 - 40, 2013-01 |
| Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS EXPRESS, v.3, no.9, 2010-08 |
| Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04 |
| Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.78 - 81, 2009-01 |
| High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR-type Flash Memory Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.265 - 268, 2009-03 |
| Highly Endurable Floating Body Cell Memory: Vertical Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Jee-Yeon; Ko, Seung-Won; Kim, Moon-Seok; Oh, Jae-Sub; Lee, Gi-Sung; et al, IEEE International Electron Devices Meeting, IEEE, 2012-12-10 |
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01 |
| Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
| Multiple-gate CMOS thin-film transistor with polysilicon nanowire Im, Mae-Soon; Han, Jin-Woo; Lee, Hyun-Jin; Yu, Lee-Eun; Kim, Sung-Ho; Kim, Chang-Hoon; Jeon, Sang-Cheol; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.102 - 105, 2008-01 |
| Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07 |
| Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
| Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes Moon, Dong-Il; Choi, Sung-Jin; Kim, Chung-Jin; Kim, Jee-Yeon; Lee, Jin-Seong; Oh, Jae-Sub; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.452 - 454, 2011-04 |
| Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
| Vertically Integrated Unidirectional Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Sung-Ho; Oh, Jae-Sub; Kim, Young-Su; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1483 - 1485, 2011-11 |
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