Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory

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A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V(th)) shift of 4.5 V is achieved in a fast programming time of 100 ns.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-01
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.78 - 81

ISSN
0741-3106
DOI
10.1109/LED.2008.2008667
URI
http://hdl.handle.net/10203/100818
Appears in Collection
EE-Journal Papers(저널논문)
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