Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject MOLECULAR-BEAM EPITAXY
Showing results 1 to 53 of 53
| An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs Kim, YK; Lee, JeongYong; Kim, HS; Song, JH; Suh, SH, JOURNAL OF CRYSTAL GROWTH, v.192, no.1-2, pp.109 - 116, 1998-08 |
| Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates Kim, TW; Lee, DU; Choo, DC; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.7, pp.922 - 924, 2001-02 |
| Atomic arrangements of (Ga(1-x)Mn(x))N nanorods grown on Al(2)O(3) substrates Lee, Kyu Hyung; Lee, JeongYong; Jung, J. H.; Kim, T. W.; Jeon, H. C.; Kang, T. W., APPLIED PHYSICS LETTERS, v.92, no.14, 2008-04 |
| Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments Yuk, Jong Min; Lee, Jeong-Yong; Lee, Zong-Hoon; No, Y. S.; Kim, T. W.; Kim, J. Y.; Choi, W. K., APPLIED SURFACE SCIENCE, v.257, no.11, pp.4817 - 4820, 2011-03 |
| Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment Shin, Jae Won; Jeong, Hu Young; Yoo, Seung Jo; Lee, Seok-Hoon; Han, Junhee; Lee, Jeong-Yong; Ahn, Jun Sung; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11, 2014-11 |
| Cation disorder and gas phase equilibrium in an YBa2Cu3O7-x superconducting thin film Shin, DC; Park, YK; Park, JC; Kang, Suk-Joong L; Yoon, Duk Yong, PHYSICA C, v.280, pp.142 - 150, 1997 |
| Coexistence behavior of the CuPtB-type and the CuAu-I-type ordered structures in highly strained CdxZn1-xTe/GaAs heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Park, HL, APPLIED PHYSICS LETTERS, v.79, no.11, pp.1637 - 1639, 2001-09 |
| Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers Kim, TW; Kwack, KD; Park, JG; Lee, HS; Lee, JeongYong; Jang, MS; Park, HL, APPLIED PHYSICS LETTERS, v.83, pp.269 - 271, 2003-07 |
| Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates Kim, TW; Lee, HS; Lee, JeongYong; Jeon, HC; Kang, TW, JOURNAL OF CRYSTAL GROWTH, v.292, pp.62 - 66, 2006-06 |
| Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures Kim, H. S.; Noh, Y. K.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.; Kim, Y. H.; Lee, JeongYong; et al, JOURNAL OF CRYSTAL GROWTH, v.301, pp.230 - 234, 2007-04 |
| Effect of thermal annealing on the formation of preferential c-axis orientation and an interfacial layer for ZnO thin films grown on an n-Si (001) substrate Yuk, Jong Min; Shin, J. W.; Lee, Jeong-Yong; Son, D. I.; Jung, J. H.; Kim, T. W.; Kim, J. Y.; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.608 - 611, 2007-03 |
| Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Kwon, YJ; Oh, JE; Gronsky, R, APPLIED PHYSICS LETTERS, v.89, pp.A38 - A38, 2006-07 |
| Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates Lee, Kyu Hyung; Lee, JeongYong; Kwon, Young Hae; Kang, Tae Won; You, Joo Hyung; Lee, Dea Uk; Kim, Taewhan, JOURNAL OF MATERIALS RESEARCH, v.24, no.10, pp.3032 - 3037, 2009-10 |
| Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures Kim, TW; Kim, JH; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.86, pp.353 - 355, 2005-01 |
| Existence and atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates Kim, TW; Lee, HS; Lee, JeongYong; Ryu, YS; Kang, TW, SOLID STATE COMMUNICATIONS, v.129, pp.515 - 518, 2004-02 |
| Existence and atomic arrangement of microtwins in hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates with monolayer InAs Buffers Lee, HS; Yi, S; Kim, TW; Lee, DU; Jeon, HC; Kang, TW; Lee, KH; et al, APPLIED PHYSICS LETTERS, v.87, pp.985 - 992, 2005-08 |
| Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10 |
| Fabrication of MgB2 thin film by rf magnetron sputtering Ahn, JR; Lee, SG; Hwang, YS; Sung, GY; Kim, Do Kyung, PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, v.388, pp.127 - 128, 2003-05 |
| Ferroelectric thin films: Review of materials, properties, and applications Setter, N.; Damjanovic, D.; Eng, L.; Fox, G.; Gevorgian, S.; Hong, S.; Kingon, A.; et al, JOURNAL OF APPLIED PHYSICS, v.100, no.5, 2006-09 |
| Formation of CuPt-type ordered (Cd, Zn)Te at CdTe/ZnTe interface Kwon, MS; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.191, no.1-2, pp.51 - 58, 1998-07 |
| Formation of the CuPt-type ordered structure in CdxZn1-xTe epilayer grown on ZnTe buffer layer on (001) GaAs substrate Lee, HS; Kwon, MS; Lee, JeongYong; Kim, TW; Park, HL, JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, pp.1263 - 1267, 2003-09 |
| Graphene Veils and Sandwiches Yuk, Jong Min; Kim, Kwan-Pyo; Aleman, Benjamin; Regan, William; Ryu, Ji-Hoon; Park, Jung-Won; Ercius, Peter; et al, NANO LETTERS, v.11, no.8, pp.3290 - 3294, 2011-08 |
| Growth and characterization of zinc oxide nanostructures on (111) silicon substrates with aluminum compound layer Kang, Dong-Suk; Han, Seok Kyu; Yang, Sang Mo; Kim, Jae Goo; Hwang, Wook Jung; Hong, Soon-Ku; Lee, Jae Wook; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, pp.292 - 298, 2008-07 |
| Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate Noh, Y. K.; Park, S. R.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.; Kim, Y. H.; Lee, JeongYong; et al, JOURNAL OF CRYSTAL GROWTH, v.301, pp.244 - 247, 2007-04 |
| Improvement of the crystallinity of a CdxZn1-xTe epitaxial film grown on a GaAs substrate using a ZnTe buffer layer Kim, TW; Park, HL; Lee, JeongYong, APPLIED SURFACE SCIENCE, v.108, no.1, pp.127 - 131, 1997-01 |
| Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, APPLIED PHYSICS LETTERS, v.79, no.23, pp.3788 - 3790, 2001-12 |
| Initial formation mechanisms of (Ga(1-x)Mn(x))N nanorods grown on Al(2)O(3) (0001) substrates Lee, Kyu Hyung; Lee, JeongYong; Jeon, H. C.; Kang, T. W.; Kwon, H. Y.; Kim, T. W., JOURNAL OF MATERIALS RESEARCH, v.23, no.12, pp.3275 - 3280, 2008-12 |
| Initiation and evolution of phase separation in GaP/InP short-period superlattices Shin, Byungha; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.1, pp.216 - 219, 2004-01 |
| Initiation and evolution of phase separation in heteroepitaxial InAlAs films Shin, Byungha; Lin, A; Lappo, K; Goldman, RS; Hanna, MC; Francoeur, S; Norman, AG; et al, APPLIED PHYSICS LETTERS, v.80, no.18, pp.3292 - 3294, 2002-05 |
| Interface and defect structures in ZnO films on m-plane sapphire substrates Lee, Jae Wook; Kim, Jung-Hyun; Han, Seok Kyu; Hong, Soon-Ku; Lee, JeongYong; Hong, Sun Ig; Yao, Takafumi, JOURNAL OF CRYSTAL GROWTH, v.312, no.2, pp.238 - 244, 2010-01 |
| Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition Shin, Byungha; Aziz, Michael J., PHYSICAL REVIEW B, v.76, no.8, 2007-08 |
| Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots Shin, Byungha; Lita, B; Goldman, RS; Phillips, JD; Bhattacharya, PK, APPLIED PHYSICS LETTERS, v.81, no.8, pp.1423 - 1425, 2002-08 |
| Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates Lee, HS; Lee, JeongYong; Kim, TW; Park, HL, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.749 - 754, 2001-12 |
| Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering Lee, Ju-Ho; Kim, Young-Yi; Cho, Hyung-Koun; Lee, Jeong-Yong, JOURNAL OF CRYSTAL GROWTH, v.311, no.22, pp.4641 - 4646, 2009-11 |
| Microstructural Characterization of High Indium-Composition InXGa1-XN Epilayers Grown on c-Plane Sapphire Substrates Jeong, Myoungho; Lee, Hyo Sung; Han, Seok Kyu; Eun-Jung-Shin; Hong, Soon-Ku; Lee, JeongYong; Park, Yun Chang; et al, MICROSCOPY AND MICROANALYSIS, v.19, pp.145 - 148, 2013-08 |
| Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01 |
| Observation of CuPt-Type Ordered Structure in CdZnTe during Organometallic Vapor Phase Epitaxial Growth Kwon, Myoung-Seok; Lee, Jeong-Yong; Suh, Sang-Hee, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.37, no.1AB, pp.21 - 23, 1998-01 |
| Observation of phase separation and ordering in the InAlAs epilayer grown on InP at the low temperature Cho, HK; Lee, JeongYong; Kwon, MS; Lee, B; Baek, JH; Han, WS, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.64, no.3, pp.174 - 179, 1999-10 |
| Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences Kim, Y. H.; Lee, JeongYong; Noh, Y. G.; Kim, M. D.; Kwon, Y. J.; Oh, J. E., JOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp.75 - 80, 2006-10 |
| Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers Park, JS; Hong, SK; Minegishi, T; Park, SH; Im, IH; Hanada, T; Cho, MW; et al, APPLIED PHYSICS LETTERS, v.90, no.20, pp.173 - 190, 2007-05 |
| Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD Kim, Dong Chan; Kong, Bo Hyun; Jun, Sang Ouk; Cho, Hyung Koun; Park, Dong Jun; Lee, JeongYong, THIN SOLID FILMS, v.516, no.16, pp.5562 - 5566, 2008-06 |
| Shapes of InAs quantum dots on InGaAs/InP Hwang, H; Yoon, S; Kwon, H; Yoon, E; Kim, HS; Lee, JeongYong; Cho, B, APPLIED PHYSICS LETTERS, v.85, pp.6383 - 6385, 2004-12 |
| Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05 |
| Stability problems in CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition at low temperature Kim, TW; Park, HL; Lee, JeongYong, APPLIED SURFACE SCIENCE, v.108, no.1, pp.121 - 125, 1997-01 |
| Strain effect and atomic arrangement studies in ZnTe/GaAs lattice-mismatched heterostructures Lee, HS; Choi, JH; Lee, JeongYong; Lee, JH; Lee, DU; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1017 - 1020, 2000-12 |
| Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface Kim, TW; Lee, DU; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.10, pp.1409 - 1411, 2001-03 |
| Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
| STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE KIM, TW; YOO, BS; MCKEE, MA; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27, 1994-03 |
| STRUCTURAL AND OPTICAL-PROPERTIES OF A STRAINED CDTE/GAAS HETEROSTRUCTURE GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, THIN SOLID FILMS, v.259, no.2, pp.253 - 258, 1995-04 |
| Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures Kim, TW; Lee, DU; You, YS; Cho, JW; Seo, KY; Lim, YS; Lee, JeongYong; et al, APPLIED SURFACE SCIENCE, v.143, no.1-4, pp.201 - 205, 1999-04 |
| Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires Ha, B; Kim, HC; Kang, SG; Kim, YH; Lee, JeongYong; Park, CY, CHEMISTRY OF MATERIALS, v.17, pp.5398 - 5403, 2005-11 |
| The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates Lee, KH; Lee, JeongYong; Kwon, YH; Ryu, SY; Kang, TW; Jung, HY; Park, SH; et al, SOLID STATE COMMUNICATIONS, v.150, pp.636 - 639, 2010-04 |
| Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 |
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