Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures

Abstract

A nearly lattice-matched Zn0.92Mg0.08S0.12Se0.88 epilayer was grown on a GaAs (100) substrate by molecular beam epitaxy. The compositional profile of the Zn0.92Mg0.08S0.12Se0.88 layers were investigated by Auger electron spectroscopy. Transmission electron microscopy measurements were performed to investigate the crystallinity of the epitaxial layer and the interface. These results indicate that Zn0.92Mg0.08S0.12Se0.88 epitaxial films grown on GaAs substrates at 250 degrees C have good interface structure and no serious interdiffusion problems and that the Zn0.92Mg0.08S0.12Se0.88 layers hold promise for applications as cladding layers for laser diodes and related optoelectronic devices operating in the blue spectral range. (C) 1999 Elsevier Science B.V. All rights reserved.