DSpace at KOASAS
College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 499
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorKim, TWko
dc.contributor.authorLee, DUko
dc.contributor.authorYou, YSko
dc.contributor.authorCho, JWko
dc.contributor.authorSeo, KYko
dc.contributor.authorLim, YSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, MDko
dc.contributor.authorPark, HSko
dc.date.accessioned2013-03-03T08:05:37Z-
dc.date.available2013-03-03T08:05:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-04-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.143, no.1-4, pp.201 - 205-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/77895-
dc.description.abstractA nearly lattice-matched Zn0.92Mg0.08S0.12Se0.88 epilayer was grown on a GaAs (100) substrate by molecular beam epitaxy. The compositional profile of the Zn0.92Mg0.08S0.12Se0.88 layers were investigated by Auger electron spectroscopy. Transmission electron microscopy measurements were performed to investigate the crystallinity of the epitaxial layer and the interface. These results indicate that Zn0.92Mg0.08S0.12Se0.88 epitaxial films grown on GaAs substrates at 250 degrees C have good interface structure and no serious interdiffusion problems and that the Zn0.92Mg0.08S0.12Se0.88 layers hold promise for applications as cladding layers for laser diodes and related optoelectronic devices operating in the blue spectral range. (C) 1999 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectVAPOR-PHASE EPITAXY-
dc.subjectROOM-TEMPERATURE-
dc.subjectGAAS SUBSTRATE-
dc.subjectQUANTUM-WELLS-
dc.subjectLASER-DIODES-
dc.subjectGROWTH-
dc.subjectTRANSPORT-
dc.subjectOPERATION-
dc.subjectZNMGSSE-
dc.titleStructural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures-
dc.typeArticle-
dc.identifier.wosid000080074200025-
dc.identifier.scopusid2-s2.0-0032652554-
dc.type.rimsART-
dc.citation.volume143-
dc.citation.issue1-4-
dc.citation.beginningpage201-
dc.citation.endingpage205-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorLee, DU-
dc.contributor.nonIdAuthorYou, YS-
dc.contributor.nonIdAuthorCho, JW-
dc.contributor.nonIdAuthorSeo, KY-
dc.contributor.nonIdAuthorLim, YS-
dc.contributor.nonIdAuthorKim, MD-
dc.contributor.nonIdAuthorPark, HS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorlattice-
dc.subject.keywordAuthorZn0.92Mg0.08S0.12Se0.88/GaAs-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusVAPOR-PHASE EPITAXY-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusGAAS SUBSTRATE-
dc.subject.keywordPlusQUANTUM-WELLS-
dc.subject.keywordPlusLASER-DIODES-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusOPERATION-
dc.subject.keywordPlusZNMGSSE-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0