Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates

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Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The fort-nation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.
Publisher
MATERIALS RESEARCH SOC
Issue Date
2009-10
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING-DIODES; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; GALLIUM NITRIDE; NANOWIRES; DISLOCATIONS; MULTICOLOR; SI(111); ARRAYS; LAYERS

Citation

JOURNAL OF MATERIALS RESEARCH, v.24, no.10, pp.3032 - 3037

ISSN
0884-2914
DOI
10.1557/JMR.2009.0391
URI
http://hdl.handle.net/10203/98276
Appears in Collection
MS-Journal Papers(저널논문)
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