DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kyu Hyung | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kwon, Young Hae | ko |
dc.contributor.author | Kang, Tae Won | ko |
dc.contributor.author | You, Joo Hyung | ko |
dc.contributor.author | Lee, Dea Uk | ko |
dc.contributor.author | Kim, Taewhan | ko |
dc.date.accessioned | 2013-03-11T04:42:40Z | - |
dc.date.available | 2013-03-11T04:42:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.citation | JOURNAL OF MATERIALS RESEARCH, v.24, no.10, pp.3032 - 3037 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/98276 | - |
dc.description.abstract | Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The fort-nation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference. | - |
dc.language | English | - |
dc.publisher | MATERIALS RESEARCH SOC | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | GALLIUM NITRIDE | - |
dc.subject | NANOWIRES | - |
dc.subject | DISLOCATIONS | - |
dc.subject | MULTICOLOR | - |
dc.subject | SI(111) | - |
dc.subject | ARRAYS | - |
dc.subject | LAYERS | - |
dc.title | Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000270500100004 | - |
dc.identifier.scopusid | 2-s2.0-70350462978 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 3032 | - |
dc.citation.endingpage | 3037 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS RESEARCH | - |
dc.identifier.doi | 10.1557/JMR.2009.0391 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kwon, Young Hae | - |
dc.contributor.nonIdAuthor | Kang, Tae Won | - |
dc.contributor.nonIdAuthor | You, Joo Hyung | - |
dc.contributor.nonIdAuthor | Lee, Dea Uk | - |
dc.contributor.nonIdAuthor | Kim, Taewhan | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | MULTICOLOR | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | LAYERS | - |
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