Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments

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ZnO thin films were deposited on n-Si substrates by using plasma-assisted molecular beam epitaxy. Plane-view zero-loss energy filtered transmission electron microscopy (TEM) images showed that the grain boundaries between large and small grains changed from the curve to the straight shape during ZnO grain growth. The [0 0 0 1]-tilt grain boundary of as-grown ZnO thin films changed from the zigzag facet planes into the symmetric tilt grain boundary through the asymmetric tilt grain boundary with periodic {0 1 (1) over bar 0}/{3 5 (8) over bar 0} flat planes. Such an atomic structural variation of grain boundary changes from curved grain boundaries to flat shape was due to decrease of total boundary energy during grain growth. The atomic structural variations of the [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments are described on the basis of the TEM images. (c) 2011 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2011-03
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE; ZINC-OXIDE; THIN-FILM; ELECTRONIC-PROPERTIES; LASERS

Citation

APPLIED SURFACE SCIENCE, v.257, no.11, pp.4817 - 4820

ISSN
0169-4332
DOI
10.1016/j.apsusc.2010.12.083
URI
http://hdl.handle.net/10203/97559
Appears in Collection
MS-Journal Papers(저널논문)
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