Atomic model for the electrical deactivation of N in Si oxynitrides

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We propose an electrically inactive nitrogen complex in oxynitrides through first-principles pseudopotential calculations. This complex consisting of two N atoms at O sites and an O vacancy removes the electrical activity of O vacancies, without bonding with hydrogen, and thus improves the electrical properties of oxynitrides. The stability of the N complex is greatly enhanced as going from the bulk to interface region. We also suggest that charge traps involving a single N atom, such as a bridging N center, are deactivated by reactions with O or NO interstitials. (C) 2003 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2003-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

SILICON-OXIDE; N2O; OXYGEN; FILMS

Citation

PHYSICA B-CONDENSED MATTER, v.340, pp.974 - 977

ISSN
0921-4526
URI
http://hdl.handle.net/10203/85983
Appears in Collection
PH-Journal Papers(저널논문)
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