Electronic structure of In1-xGaxAs/GaAs strained quantum wells with a delta-doped layer

Cited 4 time in webofscience Cited 0 time in scopus
  • Hit : 190
  • Download : 0
We investigate the electronic structure of In1-xGaxAs/GaAs strained quantum wells and the effects of S-doping on the density of states, effective mass, and transition energies via an exact treatment of the Pikus-Bir Hamiltonian. As the carrier density of the delta-doped layer increases, both the conduction and valence subbands exhibit decreasing behaviour, while the density of states and the effective masses are little affected by delta-doping. In this case, since the valence subbands decrease more rapidly with doping concentration, the energies of the transitions from the first valence subband to the conduction states are found to increase.
Publisher
IOP PUBLISHING LTD
Issue Date
1996-03
Language
ENG
Article Type
Article
Keywords

BAND OFFSET

Citation

JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.11, pp.1705 - 1712

ISSN
0953-8984
URI
http://hdl.handle.net/10203/73266
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 4 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0